Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMC1015UPD-13

    DMC1015UPD-13

    MOSFET N/P-CH 12V 9.5A PWRDI50

    Diodes Incorporated

    1,779
    RFQ
    DMC1015UPD-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 12V 9.5A, 6.9A 17mOhm @ 11.8A, 4.5V 1.5V @ 250µA 15.6nC @ 4.5V 1495pF @ 6V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
    DMC3028LSDXQ-13

    DMC3028LSDXQ-13

    MOSFET N/P-CH 30V 5.5A/5.8A 8SO

    Diodes Incorporated

    16,776
    RFQ
    DMC3028LSDXQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 5.5A, 5.8A 27mOhm @ 6A, 10V 3V @ 250µA 13.2nC @ 5V 641pF @ 15V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    MCGD30P02-TP

    MCGD30P02-TP

    MOSFET 2P-CH 20V 30A DFN

    Micro Commercial Co

    14,833
    RFQ
    MCGD30P02-TP

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 30A (Ta) 19mOhm @ 15A, 4.5V 1V @ 250µA 72.8nC @ 10V 2992pF @ 10V 21W -55°C ~ 150°C (TJ) - - Surface Mount DFN3333-D
    QH8MA3TCR

    QH8MA3TCR

    MOSFET N/P-CH 30V 7A/5.5A TSMT8

    Rohm Semiconductor

    3,000
    RFQ
    QH8MA3TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 7A, 5.5A 29mOhm @ 7A, 10V 2.5V @ 1mA 7.2nC @ 10V 300pF @ 15V 1.5W 150°C (TJ) - - Surface Mount TSMT8
    DMC1016UPD-13

    DMC1016UPD-13

    MOSFET N/P-CH 12V 9.5A PWRDI50

    Diodes Incorporated

    2,523
    RFQ
    DMC1016UPD-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 12V, 20V 9.5A, 8.7A 17mOhm @ 11.8A, 4.5V 1.5V @ 250µA 32nC @ 8V 1454pF @ 6V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
    SH8KA1GZETB

    SH8KA1GZETB

    MOSFET 2N-CH 30V 4.5A 8SOP

    Rohm Semiconductor

    7,253
    RFQ
    SH8KA1GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.5A (Ta) 80mOhm @ 4.5A, 10V 2.5V @ 1mA 3nC @ 10V 125pf @ 15V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    DMNH4026SSD-13

    DMNH4026SSD-13

    MOSFET 2N-CH 7.5A 8SOIC

    Diodes Incorporated

    4,465
    RFQ
    DMNH4026SSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 7.5A (Ta) 24mOhm @ 6A, 10V 3V @ 250µA 8.8nC @ 4.5V 1060pF @ 20V - -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    UT6JA2TCR

    UT6JA2TCR

    MOSFET 2P-CH 30V 4A HUML2020L8

    Rohm Semiconductor

    11,665
    RFQ
    UT6JA2TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active - 2 P-Channel (Dual) - 30V 4A 70mOhm @ 4A, 10V 2.5V @ 1mA 6.7nC @ 10V 305pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount HUML2020L8
    SI5515CDC-T1-E3

    SI5515CDC-T1-E3

    MOSFET N/P-CH 20V 4A 1206-8

    Vishay Siliconix

    5,703
    RFQ
    SI5515CDC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 4A (Tc) 36mOhm @ 6A, 4.5V 800mV @ 250µA 11.3nC @ 5V 632pF @ 10V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    DMN2011UFX-7

    DMN2011UFX-7

    MOSFET 2N-CH 20V 12.2A 4VDFN

    Diodes Incorporated

    2,604
    RFQ
    DMN2011UFX-7

    Tabla de datos

    - 4-VFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 12.2A (Ta) 9.5mOhm @ 10A, 4.5V 1V @ 250µA 56nC @ 10V 2248pF @ 10V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount V-DFN2050-4
    QS8M31TR

    QS8M31TR

    MOSFET N/P-CH 60V 3A TSMT8

    Rohm Semiconductor

    6,093
    RFQ
    QS8M31TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 3A (Ta), 2A (Ta) 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V 2.5V @ 1mA, 3V @ 1mA 4nC @ 5V, 7.2nC @ 5V 270pF @ 10V, 750pF @ 10V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    DMC2041UFDB-7

    DMC2041UFDB-7

    MOSFET N/P-CH 20V 4.7A 6UDFN

    Diodes Incorporated

    5,539
    RFQ
    DMC2041UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 20V 4.7A, 3.2A 40mOhm @ 4.2A, 4.5V 1.4V @ 250µA 15nC @ 8V 713pF @ 10V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    UT6JB5TCR

    UT6JB5TCR

    MOSFET 2P-CH 40V 3.5A HUML2020L8

    Rohm Semiconductor

    1,744
    RFQ
    UT6JB5TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 40V 3.5A (Ta) 122mOhm @ 3.5A, 10V 2.5V @ 1mA 6.2nC @ 10V 265pF @ 20V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    SH8K26GZ0TB

    SH8K26GZ0TB

    MOSFET 2N-CH 40V 6A 8SOP

    Rohm Semiconductor

    1,156
    RFQ
    SH8K26GZ0TB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 6A (Ta) 38mOhm @ 6A, 10V 2.5V @ 1mA 2.9nC @ 5V 280pF @ 10V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    TSM4953DCS RLG

    TSM4953DCS RLG

    MOSFET 2P-CH 30V 4.9A 8SOP

    Taiwan Semiconductor Corporation

    22,550
    RFQ
    TSM4953DCS RLG

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 4.9A (Ta) 60mOhm @ 4.9A, 10V 3V @ 250µA 28nC @ 10V 745pF @ 15V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    QS8J13TR

    QS8J13TR

    MOSFET 2P-CH 12V 5.5A TSMT8

    Rohm Semiconductor

    183
    RFQ
    QS8J13TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 5.5A 22mOhm @ 5.5A, 4.5V 1V @ 1mA 60nC @ 4.5V 6300pF @ 6V 1.25W 150°C (TJ) - - Surface Mount TSMT8
    TSM4936DCS RLG

    TSM4936DCS RLG

    MOSFET 2N-CH 30V 5.9A 8SOP

    Taiwan Semiconductor Corporation

    26,668
    RFQ
    TSM4936DCS RLG

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 5.9A (Ta) 36mOhm @ 5.9A, 10V 3V @ 250µA 13nC @ 10V 610pF @ 15V 3W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    EFC2K102ANUZTDG

    EFC2K102ANUZTDG

    MOSFET 2N-CH 12V 33A 10WLCSP

    onsemi

    14,578
    RFQ
    EFC2K102ANUZTDG

    Tabla de datos

    - 10-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 12V 33A (Ta) 2.75mOhm @ 5A, 4.5V 1.3V @ 1mA 42nC @ 3.8V - 3.1W (Ta) 150°C (TJ) - - Surface Mount 10-WLCSP (2.98x1.49)
    FDC6318P

    FDC6318P

    MOSFET 2P-CH 12V 2.5A SSOT6

    onsemi

    12,042
    RFQ
    FDC6318P

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 2.5A 90mOhm @ 2.5A, 4.5V 1.5V @ 250µA 8nC @ 4.5V 455pF @ 6V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    FDMA1029PZ

    FDMA1029PZ

    MOSFET 2P-CH 20V 3.1A 6WDFN

    onsemi

    8,048
    RFQ
    FDMA1029PZ

    Tabla de datos

    PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.1A 95mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 540pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
    Total 5737 Record«Prev1... 3839404142434445...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios