Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI1922EDH-T1-BE3

    SI1922EDH-T1-BE3

    MOSFET 2N-CH 20V 1.3A SC70-6

    Vishay Siliconix

    4,880
    RFQ
    SI1922EDH-T1-BE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 1.3A (Ta), 1.3A (Tc) 198mOhm @ 1A, 4.5V 1V @ 250µA 2.5nC @ 8V - 740mW (Ta), 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    PMDPB70XPE,115

    PMDPB70XPE,115

    MOSFET 2P-CH 20V 3A 6HUSON

    Nexperia USA Inc.

    4,817
    RFQ
    PMDPB70XPE,115

    Tabla de datos

    - 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3A 79mOhm @ 2A, 4.5V 1.25V @ 250µA 7.5nC @ 4.5V 600pF @ 10V 515mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
    SSM6P49NU,LF

    SSM6P49NU,LF

    MOSFET 2P-CH 20V 4A 6UDFN

    Toshiba Semiconductor and Storage

    10,462
    RFQ
    SSM6P49NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4A 45mOhm @ 3.5A, 10V 1.2V @ 1mA 6.74nC @ 4.5V 480pF @ 10V 1W 150°C (TJ) - - Surface Mount 6-UDFN (2x2)
    CJ3139KDW-G

    CJ3139KDW-G

    MOSFET 2P-CH 20V 0.66A SOT363

    Comchip Technology

    1,240
    RFQ
    CJ3139KDW-G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA (Ta) 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 170pF @ 16V 150mW -40°C ~ 150°C (TJ) - - Surface Mount SOT-363
    CMRDM3575 TR PBFREE

    CMRDM3575 TR PBFREE

    MOSFET N/P-CH 20V 0.16A SOT963

    Central Semiconductor Corp

    6,850
    RFQ
    CMRDM3575 TR PBFREE

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 160mA, 140mA 3Ohm @ 100mA, 4.5V 1V @ 250µA 0.46nC @ 4.5V 9pF @ 15V 125mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-963
    DMN2028UFU-7

    DMN2028UFU-7

    MOSFET 2N-CH 20V 7.5A 6UDFN

    Diodes Incorporated

    5,988
    RFQ
    DMN2028UFU-7

    Tabla de datos

    - 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 7.5A 20.2mOhm @ 4.5A, 4.5V 1V @ 250µA 18.4nC @ 8V 887pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2030-6 (Type B)
    DMG1016VQ-7

    DMG1016VQ-7

    MOSFET N/P-CH 20V 0.87A SOT563

    Diodes Incorporated

    8,202
    RFQ
    DMG1016VQ-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 870mA, 640mA 400mOhm @ 600mA, 4.5V 1V @ 250µA 0.74nC @ 4.5V 60.67pF @ 16V 530mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    CMLDM7003TG TR PBFREE

    CMLDM7003TG TR PBFREE

    MOSFET 2N-CH 50V 0.28A SOT563

    Central Semiconductor Corp

    33,985
    RFQ
    CMLDM7003TG TR PBFREE

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA 1.5Ohm @ 50mA, 5V 1.2V @ 250µA 0.76nC @ 4.5V 50pF @ 25V 350mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-563
    SIA918EDJ-T1-GE3

    SIA918EDJ-T1-GE3

    MOSFET 2N-CH 30V 4.5A PPAK8X8

    Vishay Siliconix

    7,261
    RFQ
    SIA918EDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.5A (Tc) 58mOhm @ 3A, 4.5V 900mV @ 250µA 5.5nC @ 4.5V - 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIA928DJ-T1-GE3

    SIA928DJ-T1-GE3

    MOSFET 2N-CH 30V 4.5A PPAK8X8

    Vishay Siliconix

    5,000
    RFQ
    SIA928DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.5A (Tc) 25mOhm @ 5A, 10V 2.2V @ 250µA 4.5nC @ 4.5V 490pF @ 15V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    CMLDM3737 TR PBFREE

    CMLDM3737 TR PBFREE

    MOSFET 2N-CH 20V 0.54A SOT563

    Central Semiconductor Corp

    17,972
    RFQ
    CMLDM3737 TR PBFREE

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 1.58nC @ 4.5V 150pF @ 16V 350mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-563
    DMC1229UFDB-7

    DMC1229UFDB-7

    MOSFET N/P-CH 12V 5.6A 6UDFN

    Diodes Incorporated

    5,325
    RFQ
    DMC1229UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active - N and P-Channel - 12V 5.6A, 3.8A 29mOhm @ 5A, 4.5V 1V @ 250µA 19.6nC @ 8V 914pF @ 6V 1.4W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount U-DFN2020-6 (Type B)
    SI1965DH-T1-E3

    SI1965DH-T1-E3

    MOSFET 2P-CH 12V 1.3A SC70-6

    Vishay Siliconix

    1,375
    RFQ
    SI1965DH-T1-E3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 1.3A 390mOhm @ 1A, 4.5V 1V @ 250µA 4.2nC @ 8V 120pF @ 6V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    DMN2014LHAB-7

    DMN2014LHAB-7

    MOSFET 2N-CH 20V 9A 6UDFN

    Diodes Incorporated

    2,622
    RFQ
    DMN2014LHAB-7

    Tabla de datos

    - 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 9A 13mOhm @ 4A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1550pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2030-6 (Type B)
    EM6M1T2R

    EM6M1T2R

    MOSFET N/P-CH 30V/20V 0.1A EMT6

    Rohm Semiconductor

    15,745
    RFQ
    EM6M1T2R

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 100mA, 200mA 8Ohm @ 10mA, 4V - 0.9nC @ 4.5V 13pF @ 5V 150mW 150°C (TJ) - - Surface Mount EMT6
    CMKDM8005 TR PBFREE

    CMKDM8005 TR PBFREE

    MOSFET 2P-CH 20V 0.65A SOT363

    Central Semiconductor Corp

    21,081
    RFQ
    CMKDM8005 TR PBFREE

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 650mA 360mOhm @ 350mA, 4.5V 1V @ 250µA 1.2nC @ 4.5V 100pF @ 16V 350mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-363
    QH8KA2TCR

    QH8KA2TCR

    MOSFET 2N-CH 30V 4.5A TSMT8

    Rohm Semiconductor

    2,805
    RFQ
    QH8KA2TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.5A (Ta) 35mOhm @ 4.5A, 10V 2.5V @ 1mA 8.4nC @ 10V 365pF @ 10V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    DMP2160UFDBQ-7

    DMP2160UFDBQ-7

    MOSFET 2P-CH 20V 3.8A 6UDFN

    Diodes Incorporated

    66,393
    RFQ
    DMP2160UFDBQ-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.8A 70mOhm @ 2.8A, 4.5V 900mV @ 250µA 6.5nC @ 4.5V 536pF @ 10V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMC3016LSD-13

    DMC3016LSD-13

    MOSFET N/P-CH 30V 8.2A/6.2A 8SO

    Diodes Incorporated

    10,910
    RFQ
    DMC3016LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 8.2A, 6.2A 16mOhm @ 12A, 10V 2.3V @ 250µA 25.1nC @ 10V 1415pF @ 15V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    NVJD4401NT1G

    NVJD4401NT1G

    MOSFET 2N-CH 20V 0.63A SC88

    onsemi

    49,287
    RFQ
    NVJD4401NT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 630mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
    Total 5737 Record«Prev1... 3536373839404142...287Next»
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios