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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SSM6P41FE(TE85L,F)

    SSM6P41FE(TE85L,F)

    MOSFET 2P-CH 20V 0.72A ES6

    Toshiba Semiconductor and Storage

    10,848
    RFQ
    SSM6P41FE(TE85L,F)

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 720mA 300mOhm @ 400mA, 4.5V 1V @ 1mA 1.76nC @ 4.5V 110pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
    MCQ4953-TP

    MCQ4953-TP

    MOSFET 2P-CH 30V 5A 8SOP

    Micro Commercial Co

    3,894
    RFQ
    MCQ4953-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 5A 60mOhm @ 4.9A, 10V 2.5V @ 250µA 25nC @ 10V - 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    SI1023CX-T1-GE3

    SI1023CX-T1-GE3

    MOSFET 2P-CH 20V SC89

    Vishay Siliconix

    50,405
    RFQ
    SI1023CX-T1-GE3

    Tabla de datos

    TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V - 756mOhm @ 350mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 45pF @ 10V 220mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
    DMC2038LVTQ-7

    DMC2038LVTQ-7

    MOSFET N/P-CH 20V 3.7A TSOT23-6

    Diodes Incorporated

    15,410
    RFQ
    DMC2038LVTQ-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate, 1.8V Drive 20V 3.7A (Ta), 2.6A (Ta) 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V 1V @ 250µA 5.7nC @ 4.5V, 10nC @ 4.5V 530pF @ 10V, 705pF @ 10V 800mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TSOT-23-6
    SSM6P40TU,LF

    SSM6P40TU,LF

    MOSFET 2P-CH 30V 1.4A UF6

    Toshiba Semiconductor and Storage

    14,001
    RFQ
    SSM6P40TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 4V Drive 30V 1.4A (Ta) 226mOhm @ 1A, 10V 2V @ 1mA 2.9nC @ 10V 120pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
    SI1902CDL-T1-BE3

    SI1902CDL-T1-BE3

    MOSFET 2N-CH 20V 1A SC70-6

    Vishay Siliconix

    5,985
    RFQ
    SI1902CDL-T1-BE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 1A (Ta), 1.1A (Tc) 235mOhm @ 1A, 4.5V 1.5V @ 250µA 3nC @ 10V 62pF @ 10V 300mW (Ta), 420mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    DMN2041UVT-7

    DMN2041UVT-7

    MOSFET 2N-CH 20V 5.8A TSOT26

    Diodes Incorporated

    1,946
    RFQ
    DMN2041UVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 5.8A (Ta) 28mOhm @ 8.2A, 4.5V 900mV @ 250µA 9.1nC @ 4.5V 689pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    DMC3060LVT-7

    DMC3060LVT-7

    MOSFET N/P-CH 30V 3.6A TSOT23-6

    Diodes Incorporated

    14,086
    RFQ
    DMC3060LVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 3.6A (Ta), 2.8A (Ta) 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V 1.8V @ 250µA, 2.1V @ 250µA 11.3nC @ 10V 395pF @ 15V, 324pF @ 15V 830mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-23-6
    SIL3724A-TP

    SIL3724A-TP

    MOSFET N/P-CH 30V 4.5A SOT23-6L

    Micro Commercial Co

    4,070
    RFQ
    SIL3724A-TP

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4.5A, 3.5A 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V 2.5V @ 250µA 6.08nC @ 15V 315pF @ 10V, 365pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    DMP2075UFDB-7

    DMP2075UFDB-7

    MOSFET 2P-CH 20V 3.8A 6UDFN

    Diodes Incorporated

    69,950
    RFQ
    DMP2075UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.8A (Ta) 75mOhm @ 2.9A, 4.5V 1.4V @ 250µA 8.8nC @ 4.5V 642pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMN2005DLP4K-7

    DMN2005DLP4K-7

    MOSFET 2N-CH 20V 0.3A 6DFN

    Diodes Incorporated

    26,340
    RFQ
    DMN2005DLP4K-7

    Tabla de datos

    - 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 300mA 1.5Ohm @ 10mA, 4V 900mV @ 100µA - - 400mW -65°C ~ 150°C (TJ) - - Surface Mount X2-DFN1310-6 (Type B)
    SI1553CDL-T1-GE3

    SI1553CDL-T1-GE3

    MOSFET N/P-CH 20V 0.7A SC70-6

    Vishay Siliconix

    5,893
    RFQ
    SI1553CDL-T1-GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 700mA, 500mA 390mOhm @ 700mA, 4.5V 1.5V @ 250µA 1.8nC @ 10V 38pF @ 10V 340mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1553CDL-T1-BE3

    SI1553CDL-T1-BE3

    MOSFET N/P-CH 20V 0.7A SC70-6

    Vishay Siliconix

    2,400
    RFQ
    SI1553CDL-T1-BE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 20V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V 1.5V @ 250µA 1.8nC @ 10V, 3nC @ 10V 38pF @ 10V, 43pF @ 10V 290mW (Ta), 340mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SSM6L12TU,LF

    SSM6L12TU,LF

    MOSFET N/P-CH 30V/20V 0.5A UF6

    Toshiba Semiconductor and Storage

    1,787
    RFQ
    SSM6L12TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V, 20V 500mA (Ta) 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V 1.1V @ 100µA - 245pF @ 10V, 218pF @ 10V 500mW 150°C - - Surface Mount UF6
    SSM6P54TU,LF

    SSM6P54TU,LF

    MOSFET 2P-CH 20V 1.2A UF6

    Toshiba Semiconductor and Storage

    7,515
    RFQ
    SSM6P54TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 1.2A (Ta) 228mOhm @ 600mA, 2.5V 1V @ 1mA 7.7nC @ 4V 331pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
    DMN2050LFDB-13

    DMN2050LFDB-13

    MOSFET 2N-CH 20V 3.3A 6UDFN

    Diodes Incorporated

    17,537
    RFQ
    DMN2050LFDB-13

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.3A 45mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V 730mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMC31D5UDJ-7B

    DMC31D5UDJ-7B

    MOSFET N/P-CH 30V 0.22A SOT963

    Diodes Incorporated

    26,724
    RFQ
    DMC31D5UDJ-7B

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 220mA, 200mA 1.5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V 22.6pF @ 15V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    SI1967DH-T1-E3

    SI1967DH-T1-E3

    MOSFET 2P-CH 20V 1.3A SC70-6

    Vishay Siliconix

    8,875
    RFQ
    SI1967DH-T1-E3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.3A 490mOhm @ 910mA, 4.5V 1V @ 250µA 4nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    DMC25D0UVT-7

    DMC25D0UVT-7

    MOSFET N/P-CH 25V/30V TSOT23

    Diodes Incorporated

    7,433
    RFQ
    DMC25D0UVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 25V, 30V 400mA, 3.2A 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 8V 26.2pF @ 10V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount TSOT-23-6
    SI1967DH-T1-BE3

    SI1967DH-T1-BE3

    MOSFET 2P-CH 20V 1A SC70-6

    Vishay Siliconix

    7,019
    RFQ
    SI1967DH-T1-BE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 1A (Ta), 1.3A (Tc) 490mOhm @ 910mA, 4.5V 1V @ 250µA 4nC @ 10V 110pF @ 10V 740mW (Ta), 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
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