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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SH8K39GZETB

    SH8K39GZETB

    MOSFET 2N-CH 60V 8A 8SOP

    Rohm Semiconductor

    2,424
    RFQ
    SH8K39GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 8A (Ta) 21mOhm @ 8A, 10V 2.7V @ 200µA 25nC @ 10V 1240pF @ 30V 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    CSD86330Q3D

    CSD86330Q3D

    MOSFET 2N-CH 25V 20A 8LSON

    Texas Instruments

    20,453
    RFQ
    CSD86330Q3D

    Tabla de datos

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 25V 20A 9.6mOhm @ 14A, 8V 2.1V @ 250µA 6.2nC @ 4.5V 920pF @ 12.5V 6W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (3.3x3.3)
    STL66DN3LLH5

    STL66DN3LLH5

    MOSFET 2N-CH 30V 78.5A POWERFLAT

    STMicroelectronics

    1,945
    RFQ
    STL66DN3LLH5

    Tabla de datos

    STripFET™ V 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 78.5A 6.5mOhm @ 10A, 10V 3V @ 250µA 12nC @ 4.5V 1500pF @ 25V 72W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    SI4904DY-T1-GE3

    SI4904DY-T1-GE3

    MOSFET 2N-CH 40V 8A 8SOIC

    Vishay Siliconix

    4,266
    RFQ
    SI4904DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 8A 16mOhm @ 5A, 10V 2V @ 250µA 85nC @ 10V 2390pF @ 20V 3.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    AOE6930

    AOE6930

    MOSFET 2N-CH 30V 22A 8DFN

    Alpha & Omega Semiconductor Inc.

    2,081
    RFQ
    AOE6930

    Tabla de datos

    AlphaMOS 8-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 22A (Tc), 85A (Tc) 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V 2.1V @ 250µA, 1.9V @ 250µA 15nC @ 4.5V, 65nC @ 4.5V 1075pF @ 15V, 5560pF @ 15V 24W, 75W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    SH8JB5TB1

    SH8JB5TB1

    MOSFET 2P-CH 40V 8.5A 8SOP

    Rohm Semiconductor

    11,409
    RFQ
    SH8JB5TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 40V 8.5A (Ta) 15.3mOhm @ 8.5A, 10V 2.5V @ 1mA 51nC @ 10V 2870pF @ 20V 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    SH8JC5TB1

    SH8JC5TB1

    MOSFET 2P-CH 60V 7.5A 8SOP

    Rohm Semiconductor

    4,768
    RFQ
    SH8JC5TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 60V 7.5A (Ta) 32mOhm @ 7.5A, 10V 2.5V @ 1mA 50nC @ 10V 2630pF @ 30V 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    FDPC8013S

    FDPC8013S

    MOSFET 2N-CH 30V 13A PWRCLIP-33

    onsemi

    1,262
    RFQ
    FDPC8013S

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 13A, 26A 6.4mOhm @ 13A, 10V 3V @ 250µA 13nC @ 10V 827pF @ 15V 800mW, 900mW -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
    EPC2110

    EPC2110

    MOSFET 2N-CH 120V 3.4A DIE

    EPC

    12,304
    RFQ
    EPC2110

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 120V 3.4A 60mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V - -40°C ~ 150°C (TJ) - - - Die
    IRFI4019H-117PXKMA1

    IRFI4019H-117PXKMA1

    MOSFET 2N-CH 150V 8.7A TO220-5

    Infineon Technologies

    363
    RFQ
    IRFI4019H-117PXKMA1

    Tabla de datos

    - TO-220-5 Full Pack, Formed Leads Tube Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 150V 8.7A (Tc) 95mOhm @ 5.2A, 10V 4.9V @ 50µA 20nC @ 10V 810pF @ 25V 18W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-5 Full-Pak
    IRFH4253DTRPBF

    IRFH4253DTRPBF

    MOSFET 2N-CH 25V 64A/145A PQFN

    Infineon Technologies

    4,687
    RFQ
    IRFH4253DTRPBF

    Tabla de datos

    HEXFET® 8-PowerVDFN Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 64A, 145A 3.2mOhm @ 30A, 10V 2.1V @ 35µA 15nC @ 4.5V 1314pF @ 13V 31W, 50W -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    NVMFD6H840NLT1G

    NVMFD6H840NLT1G

    MOSFET 2N-CH 80V 14A 8DFN

    onsemi

    1,502
    RFQ
    NVMFD6H840NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 14A (Ta), 74A (Tc) 6.9mOhm @ 20A, 10V 2V @ 96µA 32nC @ 10V 2002pF @ 40V - -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    SQJQ910EL-T1_GE3

    SQJQ910EL-T1_GE3

    MOSFET 2N-CH 100V 70A PPAK8X8

    Vishay Siliconix

    5,798
    RFQ
    SQJQ910EL-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 70A (Tc) 8.6mOhm @ 10A, 10V 2.5V @ 250µA 58nC @ 10V 2832pF @ 50V 187W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    EPC2221

    EPC2221

    MOSFET 2N-CH 100V 5A DIE

    EPC

    4,063
    RFQ
    EPC2221

    Tabla de datos

    - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 100V 5A - - - - - 150°C (TJ) - - Surface Mount Die
    IRFI4020H-117PXKMA1

    IRFI4020H-117PXKMA1

    MOSFET 2N-CH 200V 9.1A TO220-5

    Infineon Technologies

    768
    RFQ
    IRFI4020H-117PXKMA1

    Tabla de datos

    - TO-220-5 Full Pack, Formed Leads Tube Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 9.1A (Tc) 100mOhm @ 5.5A, 10V 4.9V @ 100µA 29nC @ 10V 1240pF @ 25V 21W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-5 Full-Pak
    SI7942DP-T1-GE3

    SI7942DP-T1-GE3

    MOSFET 2N-CH 100V 3.8A PPAK SO8

    Vishay Siliconix

    4,921
    RFQ
    SI7942DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 3.8A 49mOhm @ 5.9A, 10V 4V @ 250µA 24nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7942DP-T1-E3

    SI7942DP-T1-E3

    MOSFET 2N-CH 100V 3.8A PPAK SO8

    Vishay Siliconix

    2,937
    RFQ
    SI7942DP-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 3.8A 49mOhm @ 5.9A, 10V 4V @ 250µA 24nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    FDMQ8403

    FDMQ8403

    MOSFET 4N-CH 100V 3.1A 12MLP

    onsemi

    14,889
    RFQ
    FDMQ8403

    Tabla de datos

    GreenBridge™ PowerTrench® 12-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 3.1A 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 215pF @ 15V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 12-MLP (5x4.5)
    EPC2111

    EPC2111

    MOSFET 2N-CH 30V 16A DIE

    EPC

    19,151
    RFQ
    EPC2111

    Tabla de datos

    - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 16A (Ta) 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V 2.5V @ 5mA 2.2nC @ 5V, 5.7nC @ 5V 230pF @ 15V, 590pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    ALD1117SAL

    ALD1117SAL

    MOSFET 2P-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    195
    RFQ
    ALD1117SAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
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