Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    STS10DN3LH5

    STS10DN3LH5

    MOSFET 2N-CH 30V 10A 8SOIC

    STMicroelectronics

    10,305
    RFQ
    STS10DN3LH5

    Tabla de datos

    STripFET™ V 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 10A 21mOhm @ 5A, 10V 1V @ 250µA 4.6nC @ 5V 475pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4202DY-T1-GE3

    SI4202DY-T1-GE3

    MOSFET 2N-CH 30V 12.1A 8SOIC

    Vishay Siliconix

    3,790
    RFQ
    SI4202DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12.1A 14mOhm @ 8A, 10V 2.5V @ 250µA 17nC @ 10V 710pF @ 15V 3.7W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IPG20N10S4L35ATMA1

    IPG20N10S4L35ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON

    Infineon Technologies

    35,255
    RFQ
    IPG20N10S4L35ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 20A 35mOhm @ 17A, 10V 2.1V @ 16µA 17.4nC @ 10V 1105pF @ 25V 43W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    SQJ974EP-T1_GE3

    SQJ974EP-T1_GE3

    MOSFET 2N-CH 100V 30A PPAK SO8

    Vishay Siliconix

    2,741
    RFQ
    SQJ974EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 30A (Tc) 25.5mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V 1050pF @ 25V 48W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SI4932DY-T1-GE3

    SI4932DY-T1-GE3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    1,218
    RFQ
    SI4932DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 15mOhm @ 7A, 10V 2.5V @ 250µA 48nC @ 10V 1750pF @ 15V 3.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIZ270DT-T1-GE3

    SIZ270DT-T1-GE3

    MOSFET 2N-CH 100V 7.1A 8PWRPAIR

    Vishay Siliconix

    9,688
    RFQ
    SIZ270DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V 2.4V @ 250µA 27nC @ 10V 860pF @ 50V, 845pF @ 50V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    QS8M51TR

    QS8M51TR

    MOSFET N/P-CH 100V 2A/1.5A TSMT8

    Rohm Semiconductor

    33,181
    RFQ
    QS8M51TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 100V 2A, 1.5A 325mOhm @ 2A, 10V 2.5V @ 1mA 4.7nC @ 5V 290pF @ 25V, 950pF @ 25V 1.5W 150°C (TJ) - - Surface Mount TSMT8
    BUK7K17-60EX

    BUK7K17-60EX

    MOSFET 2N-CH 60V 30A LFPAK56D

    Nexperia USA Inc.

    166,784
    RFQ
    BUK7K17-60EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 30A 14mOhm @ 10A, 10V 4V @ 1mA 23.6nC @ 10V 1578pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    SI4946BEY-T1-GE3

    SI4946BEY-T1-GE3

    MOSFET 2N-CH 60V 6.5A 8SOIC

    Vishay Siliconix

    18,393
    RFQ
    SI4946BEY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 6.5A 41mOhm @ 5.3A, 10V 3V @ 250µA 25nC @ 10V 840pF @ 30V 3.7W -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    SISF00DN-T1-GE3

    SISF00DN-T1-GE3

    MOSFET 2N-CH 30V 60A PWRPAK1212

    Vishay Siliconix

    14,648
    RFQ
    SISF00DN-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV PowerPAK® 1212-8SCD Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 30V 60A (Tc) 5mOhm @ 10A, 10V 2.1V @ 250µA 53nC @ 10V 2700pF @ 15V 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SCD Dual
    BSZ215CHXTMA1

    BSZ215CHXTMA1

    MOSFET N/P-CH 20V 5.1A 8TSDSON

    Infineon Technologies

    5,476
    RFQ
    BSZ215CHXTMA1

    Tabla de datos

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate, 2.5V Drive 20V 5.1A, 3.2A 55mOhm @ 5.1A, 4.5V 1.4V @ 110µA 2.8nC @ 4.5V 419pF @ 10V 2.5W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TSDSON-8
    IRF7324TRPBF

    IRF7324TRPBF

    MOSFET 2P-CH 20V 9A 8SO

    Infineon Technologies

    8,949
    RFQ
    IRF7324TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 9A 18mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V 2940pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDS6975

    FDS6975

    MOSFET 2P-CH 30V 6A 8SOIC

    onsemi

    3,711
    RFQ
    FDS6975

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 6A 32mOhm @ 6A, 10V 3V @ 250µA 20nC @ 5V 1540pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIZ998DT-T1-GE3

    SIZ998DT-T1-GE3

    MOSFET 2N-CH 30V 20A 8POWERPAIR

    Vishay Siliconix

    3,790
    RFQ
    SIZ998DT-T1-GE3

    Tabla de datos

    TrenchFET® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual), Schottky - 30V 20A (Tc), 60A (Tc) 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V 2.2V @ 250µA 8.1nC @ 4.5V, 19.8nC @ 4.5V 930pF @ 15V, 2620pF @ 15V 20.2W, 32.9W -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (6x5)
    AOE6936

    AOE6936

    MOSFET 2N-CH 30V 55A 8DFN

    Alpha & Omega Semiconductor Inc.

    3,178
    RFQ
    AOE6936

    Tabla de datos

    - 8-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 55A (Tc), 85A (Tc) 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V 2.2V @ 250µA, 2.1V @ 250µA 15nC @ 4.5V, 25nC @ 4.5V 1150pF @ 15V, 2270pF @ 15V 24W, 39W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    IPG20N04S4L07ATMA1

    IPG20N04S4L07ATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    2,651
    RFQ
    IPG20N04S4L07ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 7.2mOhm @ 17A, 10V 2.2V @ 30µA 50nC @ 10V 3980pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    STS5DNF60L

    STS5DNF60L

    MOSFET 2N-CH 60V 5A 8SOIC

    STMicroelectronics

    2,040
    RFQ
    STS5DNF60L

    Tabla de datos

    STripFET™ II 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 5A 45mOhm @ 2A, 10V 2.5V @ 250µA 15nC @ 4.5V 1030pF @ 25V 2W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SQJ504EP-T1_GE3

    SQJ504EP-T1_GE3

    MOSFET N/P-CH 40V 30A PPAK SO8

    Vishay Siliconix

    5,457
    RFQ
    SQJ504EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 30A (Tc) 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V 2.5V @ 250µA 30nC @ 10V, 85nC @ 10V 1900pF @ 25V, 4600pF @ 25V 34W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SQJ951EP-T1_GE3

    SQJ951EP-T1_GE3

    MOSFET 2P-CH 30V 30A PPAK SO8

    Vishay Siliconix

    3,715
    RFQ
    SQJ951EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 30A 17mOhm @ 7.5A, 10V 2.5V @ 250µA 50nC @ 10V 1680pF @ 10V 56W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SQJ951EP-T1_BE3

    SQJ951EP-T1_BE3

    MOSFET 2P-CH 30V 30A PPAK SO8

    Vishay Siliconix

    3,115
    RFQ
    SQJ951EP-T1_BE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 30A (Tc) 17mOhm @ 7.5A, 10V 2.5V @ 250µA 50nC @ 10V 1680pF @ 10V 56W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    Total 5737 Record«Prev1... 2728293031323334...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios