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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI4590DY-T1-GE3

    SI4590DY-T1-GE3

    MOSFET N/P-CH 100V 3.4A 8SOIC

    Vishay Siliconix

    6,440
    RFQ
    SI4590DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy - N and P-Channel - 100V 3.4A, 2.8A 57mOhm @ 2A, 10V 2.5V @ 250µA 11.5nC @ 10V 360pF @ 50V 2.4W, 3.4W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CSD88539ND

    CSD88539ND

    MOSFET 2N-CH 60V 15A 8SOIC

    Texas Instruments

    3,994
    RFQ
    CSD88539ND

    Tabla de datos

    NexFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 28mOhm @ 5A, 10V 3.6V @ 250µA 9.4nC @ 10V 741pF @ 30V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    UT6MA3TCR

    UT6MA3TCR

    MOSFET N/P-CH 20V 5A HUML2020L8

    Rohm Semiconductor

    9,913
    RFQ
    UT6MA3TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active - N and P-Channel - 20V 5A, 5.5A 59mOhm @ 5A, 4.5V 1.5V @ 1mA 6.5nC @ 4.5V 460pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount HUML2020L8
    SI4946CDY-T1-GE3

    SI4946CDY-T1-GE3

    MOSFET 2N-CH 60V 5.2A 8SO

    Vishay Siliconix

    1,302
    RFQ
    SI4946CDY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 5.2A (Ta), 6.1A (Tc) 40.9mOhm @ 5.2A, 10V 3V @ 250µA 10nC @ 10V 350pF @ 30V 2W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9362TRPBF

    IRF9362TRPBF

    MOSFET 2P-CH 30V 8A 8SO

    Infineon Technologies

    47,470
    RFQ
    IRF9362TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.4V @ 25µA 39nC @ 10V 1300pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AO4813

    AO4813

    MOSFET 2P-CH 30V 7.1A 8SOIC

    Alpha & Omega Semiconductor Inc.

    63,919
    RFQ
    AO4813

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 7.1A 25mOhm @ 7.1A, 10V 2.5V @ 250µA 19nC @ 10V 1250pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    BSC150N03LDGATMA1

    BSC150N03LDGATMA1

    MOSFET 2N-CH 30V 8A 8TDSON

    Infineon Technologies

    46,097
    RFQ
    BSC150N03LDGATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 15mOhm @ 20A, 10V 2.2V @ 250µA 13.2nC @ 10V 1100pF @ 15V 26W -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-4
    FDS9934C

    FDS9934C

    MOSFET N/P-CH 20V 6.5A/5A 8SOIC

    onsemi

    5,148
    RFQ
    FDS9934C

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 6.5A, 5A 30mOhm @ 6.5A, 4.5V 1.5V @ 250µA 9nC @ 4.5V 650pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    DMHC3025LSDQ-13

    DMHC3025LSDQ-13

    MOSFET 2N/2P-CH 30V 6A/4.2A 8SO

    Diodes Incorporated

    1,890
    RFQ
    DMHC3025LSDQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 30V 6A, 4.2A 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V 2V @ 250µA 11.7nC @ 10V, 11.4nC @ 10V 590pF @ 15V, 631pF @ 15V 1.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    IRF7303TRPBF

    IRF7303TRPBF

    MOSFET 2N-CH 30V 4.9A 8SO

    Infineon Technologies

    3,293
    RFQ
    IRF7303TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.9A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SH8KB6TB1

    SH8KB6TB1

    MOSFET 2N-CH 40V 8.5A 8SOP

    Rohm Semiconductor

    11,647
    RFQ
    SH8KB6TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 8.5A (Ta) 19.4mOhm @ 8.5A, 10V 2.5V @ 1mA 10.6nC @ 10V 530pF @ 20V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    SIS990DN-T1-GE3

    SIS990DN-T1-GE3

    MOSFET 2N-CH 100V 12.1A PPAK1212

    Vishay Siliconix

    12,860
    RFQ
    SIS990DN-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 12.1A 85mOhm @ 8A, 10V 4V @ 250µA 8nC @ 10V 250pF @ 50V 25W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    NVLJWD023N04CLTAG

    NVLJWD023N04CLTAG

    MOSFET 2N-CH 40V 7A 6WDFNW

    onsemi

    2,393
    RFQ
    NVLJWD023N04CLTAG

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 7A (Ta), 25A (Tc) 23mOhm @ 5A, 10V 2V @ 13µA 9nC @ 10V 440pF @ 25V 2W (Ta), 24W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 6-WDFNW (2.2x2.3)
    SI7223DN-T1-GE3

    SI7223DN-T1-GE3

    MOSFET 2P-CH 30V 6A PPAK 1212

    Vishay Siliconix

    5,947
    RFQ
    SI7223DN-T1-GE3

    Tabla de datos

    TrenchFET® Gen III PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 6A (Tc) 26.4mOhm @ 8A, 10V 2.5V @ 250µA 40nC @ 10V 1425pF @ 15V 2.6W (Ta), 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    CSD87330Q3D

    CSD87330Q3D

    MOSFET 2N-CH 30V 20A 8LSON

    Texas Instruments

    28,092
    RFQ
    CSD87330Q3D

    Tabla de datos

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 20A - 2.1V @ 250µA 5.8nC @ 4.5V 900pF @ 15V 6W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (3.3x3.3)
    IRL6372TRPBF

    IRL6372TRPBF

    MOSFET 2N-CH 30V 8.1A 8SO

    Infineon Technologies

    12,134
    RFQ
    IRL6372TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8.1A 17.9mOhm @ 8.1A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1020pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    QS8K21TR

    QS8K21TR

    MOSFET 2N-CH 45V 4A TSMT8

    Rohm Semiconductor

    7,223
    RFQ
    QS8K21TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 45V 4A 53mOhm @ 4A, 10V 2.5V @ 1mA 5.4nC @ 5V 460pF @ 10V 550mW 150°C (TJ) - - Surface Mount TSMT8
    FDS8858CZ

    FDS8858CZ

    MOSFET N/P-CH 30V 8.6A 8SOIC

    onsemi

    48,124
    RFQ
    FDS8858CZ

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 8.6A, 7.3A 17mOhm @ 8.6A, 10V 3V @ 250µA 24nC @ 10V 1205pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    ZXMC3A17DN8TA

    ZXMC3A17DN8TA

    MOSFET N/P-CH 30V 4.1A/3.4A 8SO

    Diodes Incorporated

    4,759
    RFQ
    ZXMC3A17DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.1A, 3.4A 50mOhm @ 7.8A, 10V 1V @ 250µA (Min) 12.2nC @ 10V 600pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ZXMC10A816N8TC

    ZXMC10A816N8TC

    MOSFET N/P-CH 100V 2A 8SO

    Diodes Incorporated

    1,524
    RFQ
    ZXMC10A816N8TC

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 100V 2A 230mOhm @ 1A, 10V 2.4V @ 250µA 9.2nC @ 10V 497pF @ 50V, 717pF @ 50V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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