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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM120HM16CTBL3NG

    MSCSM120HM16CTBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    2,337
    RFQ
    MSCSM120HM16CTBL3NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    PJT7808_R2_00001

    PJT7808_R2_00001

    MOSFET 2N-CH 20V 0.5A SOT363

    EMO Inc.

    2,240
    RFQ
    PJT7808_R2_00001

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 500mA (Ta) 400mOhm @ 500mA, 4.5V 900mV @ 250µA 1.4nC @ 4.5V 67pF @ 10V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    FF1MR12KM1HP

    FF1MR12KM1HP

    MOSFET

    Infineon Technologies

    2,190
    RFQ

    -

    - - Tray Active - - - - - - - - - - - - - - -
    GE17045EEA3

    GE17045EEA3

    MOSFET 6N-CH 1700V 425A

    GE Aerospace

    2,232
    RFQ
    GE17045EEA3

    Tabla de datos

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
    MSCSM120HM16TBL3NG

    MSCSM120HM16TBL3NG

    MOSFET 6N-CH 1200V 150A

    Microchip Technology

    2,589
    RFQ
    MSCSM120HM16TBL3NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM16TBL3NG

    MSCSM120DDUM16TBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    4,251
    RFQ
    MSCSM120DDUM16TBL3NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    DMN5L06VKQ-13

    DMN5L06VKQ-13

    MOSFET 2N-CH 50V 0.28A SOT563

    Diodes Incorporated

    2,485
    RFQ
    DMN5L06VKQ-13

    Tabla de datos

    - SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    IRF8910TRPBF-1

    IRF8910TRPBF-1

    MOSFET 2N-CH 20V 10A 8SO

    Infineon Technologies

    3,675
    RFQ

    -

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 10A (Ta) 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IPG20N06S2L65AAUMA1

    IPG20N06S2L65AAUMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    2,918
    RFQ

    -

    OptiMOS™ 8-PowerVDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 65mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PG-TDSON-8-10
    NTMFD0D9N02P1E

    NTMFD0D9N02P1E

    MOSFET 2N-CH 30V/25V 14A 8PQFN

    onsemi

    4,565
    RFQ
    NTMFD0D9N02P1E

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    GE12050EEA3

    GE12050EEA3

    MOSFET 6N-CH 1200V 475A MODULE

    GE Aerospace

    3,068
    RFQ
    GE12050EEA3

    Tabla de datos

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
    GE17140CEA3

    GE17140CEA3

    MOSFET 2N-CH 1700V 1.275KA MODUL

    GE Aerospace

    2,647
    RFQ
    GE17140CEA3

    Tabla de datos

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module
    UM6K1N-TP

    UM6K1N-TP

    MOSFET 2N-CH 30V 0.1A SOT363

    Micro Commercial Co

    2,033
    RFQ
    UM6K1N-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA 8Ohm @ 10mA, 4V 1.5V @ 100µA - 13pF @ 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    2N7002DWL-TP

    2N7002DWL-TP

    MOSFET 2N-CH 60V 0.115A SOT23-6L

    Micro Commercial Co

    3,227
    RFQ
    2N7002DWL-TP

    Tabla de datos

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 115mA 4.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 225mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SIL6321-TP

    SIL6321-TP

    MOSFET N/P-CH 30V 1A SOT23-6L

    Micro Commercial Co

    2,032
    RFQ

    -

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 1A 320mOhm @ 1A, 10V 1.4V @ 250µA, 1.3V @ 250µA - 1155pF @ 15V, 1050pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SI3139KDW-TP

    SI3139KDW-TP

    MOSFET 2P-CH 20V 0.66A SOT363

    Micro Commercial Co

    4,482
    RFQ

    -

    - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 175pF @ 16V 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SIL3439K-TP

    SIL3439K-TP

    MOSFET N/P-CH 20V 1.3A SOT23-6L

    Micro Commercial Co

    2,309
    RFQ

    -

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.3A, 1.1A 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 60pF @ 16V, 175pF @ 16V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    TPC8228-H,LQ

    TPC8228-H,LQ

    MOSFET 2N-CH 60V 3.8A 8SOP

    Toshiba Semiconductor and Storage

    2,104
    RFQ
    TPC8228-H,LQ

    Tabla de datos

    U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.8A 57mOhm @ 1.9A, 10V 2.3V @ 100µA 11nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
    TPC8227-H,LQ

    TPC8227-H,LQ

    MOSFET 2N-CH 40V 5.1A 8SOP

    Toshiba Semiconductor and Storage

    4,592
    RFQ
    TPC8227-H,LQ

    Tabla de datos

    U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.1A 33mOhm @ 2.6A, 10V 2.3V @ 100µA 10nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
    IPG20N06S2L65AUMA1

    IPG20N06S2L65AUMA1

    MOSFET

    Infineon Technologies

    2,646
    RFQ

    -

    - - Bulk Obsolete - - - - - - - - - - - - - - -
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