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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SP8K3FD5TB1

    SP8K3FD5TB1

    MOSFET 2N-CH 30V 8SOP

    Rohm Semiconductor

    4,658
    RFQ

    -

    - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
    SP8K3TB1

    SP8K3TB1

    MOSFET 2N-CH 30V 7A 8SOP

    Rohm Semiconductor

    3,608
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 7A (Ta) 24mOhm @ 7A, 10V 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V 2W (Ta) 150°C - - Surface Mount 8-SOP
    BSC150N03LD

    BSC150N03LD

    MOSFET 2N-CH 30V 8A 8TDSON

    Infineon Technologies

    2,067
    RFQ
    BSC150N03LD

    Tabla de datos

    OptiMOS™ 3 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 15mOhm @ 20A, 10V 2.2V @ 250µA 6.4nC @ 10V 1100pF @ 15V 26W -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-4
    DF11MR12W1M1PB11BPSA1

    DF11MR12W1M1PB11BPSA1

    MOSFET 2N-CH 1200V 50A AG-EASY1B

    Infineon Technologies

    3,512
    RFQ
    DF11MR12W1M1PB11BPSA1

    Tabla de datos

    EasyPACK™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 50A (Tj) 22.5mOhm @ 50A, 15V 5.55V @ 20mA 124nC @ 15V 3680pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
    IRF7313TRPBF-1

    IRF7313TRPBF-1

    MOSFET 2N-CH 30V 6.5A 8SOIC

    Infineon Technologies

    3,356
    RFQ
    IRF7313TRPBF-1

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6.5A (Ta) 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    MSCMC120AM02CT6LIAG

    MSCMC120AM02CT6LIAG

    MOSFET 2N-CH 1200V 742A SP6C LI

    Microchip Technology

    4,247
    RFQ
    MSCMC120AM02CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V 33500pF @ 1000V 3200W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC120AM04CT6LIAG

    MSCMC120AM04CT6LIAG

    MOSFET 2N-CH 1200V 388A SP6C LI

    Microchip Technology

    3,164
    RFQ
    MSCMC120AM04CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V 16700pF @ 1000V 1754W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC120AM03CT6LIAG

    MSCMC120AM03CT6LIAG

    MOSFET 2N-CH 1200V 631A SP6C LI

    Microchip Technology

    4,080
    RFQ
    MSCMC120AM03CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V 27900pF @ 1000V 2778W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC90AM12C3AG

    MSCMC90AM12C3AG

    MOSFET 900V 110A SP3F

    Microchip Technology

    2,909
    RFQ
    MSCMC90AM12C3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) - - 900V 110A (Tc) - - - - - - - - Chassis Mount SP3F
    MSCMC120AM07CT6LIAG

    MSCMC120AM07CT6LIAG

    MOSFET 2N-CH 1200V 264A SP6C LI

    Microchip Technology

    3,304
    RFQ
    MSCMC120AM07CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V 11400pF @ 1000V 1350W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC170AM08CT6LIAG

    MSCMC170AM08CT6LIAG

    MOSFET 2N-CH 1700V 280A SP6C LI

    Microchip Technology

    2,795
    RFQ
    MSCMC170AM08CT6LIAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V 22000pF @ 1000V 1780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6C LI
    IRF9910TRPBF-1

    IRF9910TRPBF-1

    MOSFET 2N-CH 20V 10A 8SOIC

    Infineon Technologies

    2,063
    RFQ
    IRF9910TRPBF-1

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 10A (Ta), 12A (Ta) 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V 2.55V @ 250µA 11nC @ 4.5V, 23nC @ 4.5V 900pF @ 10V, 1860pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTMFD5875NLT1G

    NTMFD5875NLT1G

    MOSFET 2N-CH 60V 7A 8DFN

    onsemi

    2,932
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 7A (Ta), 22A (Tc) 33mOhm @ 7.5A, 10V 3V @ 250µA 5.9nC @ 4.5V 540pF @ 25V 3.2W (Ta), 32W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    AO4914

    AO4914

    MOSFET 2N-CH 30V 8A 8SOIC

    Alpha & Omega Semiconductor Inc.

    3,469
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual), Schottky - 30V 8A (Ta) 20.5mOhm @ 8A, 10V 2.4V @ 250µA 18nC @ 10V 865pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FF6MR12KM1PHOSA1

    FF6MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 250A AG-62MM

    Infineon Technologies

    3,550
    RFQ
    FF6MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF3MR12KM1PHOSA1

    FF3MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 375A AG-62MM

    Infineon Technologies

    2,341
    RFQ
    FF3MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF3MR12KM1HOSA1

    FF3MR12KM1HOSA1

    MOSFET 2N-CH 1200V 375A AG-62MM

    Infineon Technologies

    2,059
    RFQ
    FF3MR12KM1HOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF2MR12KM1PHOSA1

    FF2MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 500A AG-62MM

    Infineon Technologies

    4,273
    RFQ
    FF2MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    HUFA76407DK8TF085P

    HUFA76407DK8TF085P

    MOSFET 2N-CH 60V 3.8A 8SOIC

    onsemi

    4,185
    RFQ

    -

    UltraFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 3.8A (Ta) 90mOhm @ 3.8A, 10V 3V @ 250µA - 330pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    PMDPB95XNE2115

    PMDPB95XNE2115

    MOSFET 2N-CH 30V 2.7A 6HUSON

    NXP USA Inc.

    3,107
    RFQ
    PMDPB95XNE2115

    Tabla de datos

    - 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V 258pF @ 15V 510mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
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