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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    2N7002VA

    2N7002VA

    MOSFET 2N-CH 60V 0.28A SOT563F

    Fairchild Semiconductor

    3,982
    RFQ
    2N7002VA

    Tabla de datos

    - SOT-563, SOT-666 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 280mA 7.5Ohm @ 50mA, 5V 2.5V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563F
    IRF40H233ATMA1

    IRF40H233ATMA1

    MOSFET 2N-CH 40V 65A 8TDSON

    Infineon Technologies

    2,585
    RFQ

    -

    StrongIRFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 65A (Tc) 6.2mOhm @ 35A, 10V 3.9V @ 50µA 57nC @ 10V 2200pF @ 20V 3.8W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-4
    FDMS3622SF121

    FDMS3622SF121

    MOSFET N-CHANNEL POWER56

    onsemi

    4,983
    RFQ

    -

    - - Bulk Obsolete - - - - - - - - - - - - - - -
    CMXDM7002A BK PBFREE

    CMXDM7002A BK PBFREE

    MOSFET 2N-CH 60V 0.28A SOT26

    Central Semiconductor Corp

    3,156
    RFQ
    CMXDM7002A BK PBFREE

    Tabla de datos

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 280mA (Ta) 2Ohm @ 500mA, 10V 2.5V @ 250µA 0.592nC @ 4.5V 50pF @ 25V 350mW (Ta) -65°C ~ 150°C (TJ) - - Surface Mount SOT-26
    F415MR12W2M1B76BOMA1

    F415MR12W2M1B76BOMA1

    MOSFET 4N-CH 1200V 75A AG-EASY1B

    Infineon Technologies

    4,834
    RFQ

    -

    EasyPACK™ CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 75A (Tj) 15mOhm @ 75A, 15V 5.55V @ 30mA 186nC @ 15V 5520pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
    SIL3724-TP

    SIL3724-TP

    MOSFET N/P-CH 30V 5.8A SOT23-6L

    Micro Commercial Co

    3,699
    RFQ
    SIL3724-TP

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 5.8A, 4.1A 30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V 2.5V @ 250µA, 2.2V @ 250µA - 820pF @ 15V, 700pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    MCX3152P-TP

    MCX3152P-TP

    MOSFET 2P-CH 20V 0.66A SOT563

    Micro Commercial Co

    4,995
    RFQ
    MCX3152P-TP

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA 700mOhm @ 660mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 175pF @ 16V 150mW 150°C (TJ) - - Surface Mount SOT-563
    MCQ4828-TP

    MCQ4828-TP

    MOSFET 2N-CH 60V 4.5A 8SOP

    Micro Commercial Co

    2,874
    RFQ
    MCQ4828-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 4.5A (Ta) 56mOhm @ 4.5A, 10V 3V @ 250µA 10.5nC @ 10V 540pF @ 30V 1.25W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    MCQ6005-TP

    MCQ6005-TP

    MOSFET 2N-CH 60V 5A 8SOP

    Micro Commercial Co

    3,390
    RFQ
    MCQ6005-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 5A 35mOhm @ 5A, 10V 2.5V @ 250µA 22nC @ 10V 979pF @ 30V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    MCS8804-TP

    MCS8804-TP

    MOSFET 2N-CH 20V 8A 8TSSOP

    Micro Commercial Co

    3,328
    RFQ
    MCS8804-TP

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 8A 13mOhm @ 8A, 10V 1V @ 250µA 17.9nC @ 4.5V 1800pF @ 10V - -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    FF11MR12W1M1B70BPSA1

    FF11MR12W1M1B70BPSA1

    MOSFET 2N-CH 1200V AG-EASY1B

    Infineon Technologies

    4,469
    RFQ
    FF11MR12W1M1B70BPSA1

    Tabla de datos

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
    FF6MR12W2M1B70BPSA1

    FF6MR12W2M1B70BPSA1

    MOSFET 2N-CH 1200V AG-EASY2B

    Infineon Technologies

    4,359
    RFQ
    FF6MR12W2M1B70BPSA1

    Tabla de datos

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY2B
    FS03MR12A6MA1LB

    FS03MR12A6MA1LB

    MOSFET 6N-CH 1200V AG-HYBRIDD

    Infineon Technologies

    3,388
    RFQ
    FS03MR12A6MA1LB

    Tabla de datos

    HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 400A 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42600pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-HYBRIDD-2
    SQJ912AEP-T2_GE3

    SQJ912AEP-T2_GE3

    MOSFET 2N-CH 40V 30A PPAK SO8

    Vishay Siliconix

    4,863
    RFQ
    SQJ912AEP-T2_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 30A (Tc) 9.3mOhm @ 9.7A, 10V 2.5V @ 250µA 38nC @ 10V 1835pF @ 20V 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    BSS8402DW-7-G

    BSS8402DW-7-G

    MOSFET N/P-CH 60V/50V SOT363

    Diodes Incorporated

    3,150
    RFQ
    BSS8402DW-7-G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary - 60V, 50V 115mA (Ta), 130mA (Ta) 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V 2.5V @ 250µA, 2V @ 1mA - 50pF @ 25V, 45pF @ 25V 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    AON5802BG

    AON5802BG

    MOSFET 2N-CH 30V 10A 6DFN

    Alpha & Omega Semiconductor Inc.

    2,164
    RFQ
    AON5802BG

    Tabla de datos

    - 6-WFDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10A (Ta) 18mOhm @ 7A, 4.5V 1.5V @ 250µA 32nC @ 10V 1050pF @ 15V 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN-EP (2x5)
    GE12047BCA3

    GE12047BCA3

    MOSFET 2N-CH 1200V 475A

    GE Aerospace

    2,370
    RFQ
    GE12047BCA3

    Tabla de datos

    SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount -
    GE12047CCA3

    GE12047CCA3

    MOSFET 2N-CH 1200V 475A MODULE

    GE Aerospace

    3,360
    RFQ
    GE12047CCA3

    Tabla de datos

    SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount Module
    FF45MR12W1M1PB11BPSA1

    FF45MR12W1M1PB11BPSA1

    MOSFET 2N-CH 1200V AG-EASY1BM

    Infineon Technologies

    4,690
    RFQ

    -

    CoolSiC™ Module Tray Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM
    GE17042CCA3

    GE17042CCA3

    MOSFET 2N-CH 1700V 425A MODULE

    GE Aerospace

    2,366
    RFQ
    GE17042CCA3

    Tabla de datos

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
    Total 5737 Record«Prev1... 278279280281282283284285...287Next»
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