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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI7224DN-T1-E3

    SI7224DN-T1-E3

    MOSFET 2N-CH 30V 6A PPAK 1212

    Vishay Siliconix

    3,540
    RFQ
    SI7224DN-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 35mOhm @ 6.5A, 10V 2.2V @ 250µA 14.5nC @ 10V 570pF @ 15V 17.8W, 23W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SI7236DP-T1-E3

    SI7236DP-T1-E3

    MOSFET 2N-CH 20V 60A PPAK SO8

    Vishay Siliconix

    2,280
    RFQ
    SI7236DP-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 60A 5.2mOhm @ 20.7A, 4.5V 1.5V @ 250µA 105nC @ 10V 4000pF @ 10V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7905DN-T1-E3

    SI7905DN-T1-E3

    MOSFET 2P-CH 40V 6A PPAK 1212

    Vishay Siliconix

    4,780
    RFQ
    SI7905DN-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 40V 6A 60mOhm @ 5A, 10V 3V @ 250µA 30nC @ 10V 880pF @ 20V 20.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SI7940DP-T1-E3

    SI7940DP-T1-E3

    MOSFET 2N-CH 12V 7.6A PPAK SO8

    Vishay Siliconix

    3,057
    RFQ

    -

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 12V 7.6A 17mOhm @ 11.8A, 4.5V 1.5V @ 250µA 17nC @ 4.5V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7964DP-T1-GE3

    SI7964DP-T1-GE3

    MOSFET 2N-CH 60V 6.1A PPAK SO8

    Vishay Siliconix

    4,950
    RFQ
    SI7964DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6.1A 23mOhm @ 9.6A, 10V 4.5V @ 250µA 65nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI9936BDY-T1-GE3

    SI9936BDY-T1-GE3

    MOSFET 2N-CH 30V 4.5A 8SOIC

    Vishay Siliconix

    4,574
    RFQ
    SI9936BDY-T1-GE3

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 35mOhm @ 6A, 10V 3V @ 250µA 13nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIA777EDJ-T1-GE3

    SIA777EDJ-T1-GE3

    MOSFET N/P-CH 20V/12V 1.5A PPAK

    Vishay Siliconix

    3,019
    RFQ
    SIA777EDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 12V 1.5A, 4.5A 225mOhm @ 1.6A, 4.5V 1V @ 250µA 2.2nC @ 5V - 5W, 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIZ700DT-T1-GE3

    SIZ700DT-T1-GE3

    MOSFET 2N-CH 20V 16A 6POWERPAIR

    Vishay Siliconix

    2,375
    RFQ
    SIZ700DT-T1-GE3

    Tabla de datos

    TrenchFET® 6-PowerPair™ Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 20V 16A 8.6mOhm @ 15A, 10V 2.2V @ 250µA 35nC @ 10V 1300pF @ 10V 2.36W, 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 6-PowerPair™
    SIZ720DT-T1-GE3

    SIZ720DT-T1-GE3

    MOSFET 2N-CH 20V 16A 6POWERPAIR

    Vishay Siliconix

    3,818
    RFQ
    SIZ720DT-T1-GE3

    Tabla de datos

    TrenchFET® 6-PowerPair™ Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 20V 16A 8.7mOhm @ 16.8A, 10V 2V @ 250µA 23nC @ 10V 825pF @ 10V 27W, 48W -55°C ~ 150°C (TJ) - - Surface Mount 6-PowerPair™
    SQJ941EP-T1-GE3

    SQJ941EP-T1-GE3

    MOSFET 2P-CH 30V 8A PPAK SO8

    Vishay Siliconix

    3,964
    RFQ
    SQJ941EP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 24mOhm @ 9A, 10V 2.5V @ 250µA 55nC @ 10V 1800pF @ 10V 55W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SUD50NP04-77P-T4E3

    SUD50NP04-77P-T4E3

    MOSFET N/P-CH 40V 8A TO252-4

    Vishay Siliconix

    3,366
    RFQ

    -

    TrenchFET® TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 40V 8A 37mOhm @ 5A, 10V 2.5V @ 250µA 20nC @ 10V 640pF @ 20V 10.8W, 24W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4
    NTMD5836NLR2G

    NTMD5836NLR2G

    MOSFET 2N-CH 40V 9A/5.7A 8SOIC

    onsemi

    2,940
    RFQ
    NTMD5836NLR2G

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 9A, 5.7A 12mOhm @ 10A, 10V 3V @ 250µA 50nC @ 10V 2120pF @ 20V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4228DY-T1-E3

    SI4228DY-T1-E3

    MOSFET 2N-CH 25V 8A 8SOIC

    Vishay Siliconix

    2,602
    RFQ
    SI4228DY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 8A 18mOhm @ 7A, 10V 1.4V @ 250µA 25nC @ 10V 790pF @ 12.5V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4276DY-T1-E3

    SI4276DY-T1-E3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    2,190
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 15.3mOhm @ 9.5A, 10V 2.5V @ 250µA 26nC @ 10V 1000pF @ 15V 3.6W, 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4804CDY-T1-E3

    SI4804CDY-T1-E3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    4,147
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A 22mOhm @ 7.5A, 10V 2.4V @ 250µA 23nC @ 10V 865pF @ 15V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRL6372PBF

    IRL6372PBF

    MOSFET 2N-CH 30V 8.1A 8SO

    Infineon Technologies

    3,160
    RFQ
    IRL6372PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8.1A 17.9mOhm @ 8.1A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1020pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ECH8601M-TL-H

    ECH8601M-TL-H

    MOSFET 2N-CH 24V 8A 8ECH

    onsemi

    4,360
    RFQ

    -

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 24V 8A (Ta) 23mOhm @ 4A, 4.5V 1.3V @ 1mA 7.5nC @ 4.5V - - 150°C (TJ) - - Surface Mount 8-ECH
    ECH8659-TL-H

    ECH8659-TL-H

    MOSFET 2N-CH 30V 7A 8ECH

    onsemi

    4,319
    RFQ
    ECH8659-TL-H

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7A 24mOhm @ 3.5A, 10V - 11.8nC @ 10V 710pF @ 10V 1.5W 150°C (TJ) - - Surface Mount 8-ECH
    ECH8662-TL-H

    ECH8662-TL-H

    MOSFET 2N-CH 40V 6.5A 8ECH

    onsemi

    3,515
    RFQ
    ECH8662-TL-H

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 6.5A 30mOhm @ 3.5A, 4.5V - 12nC @ 4.5V 1130pF @ 20V 1.5W 150°C (TJ) - - Surface Mount 8-ECH
    ECH8664R-TL-H

    ECH8664R-TL-H

    MOSFET 2N-CH 30V 7A 8ECH

    onsemi

    2,620
    RFQ
    ECH8664R-TL-H

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7A 23.5mOhm @ 3.5A, 4.5V - 10nC @ 4.5V - 1.4W 150°C (TJ) - - Surface Mount 8-ECH
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