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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF6723M2DTR1P

    IRF6723M2DTR1P

    MOSFET 2N-CH 30V 15A DIRECTFETMA

    Infineon Technologies

    4,606
    RFQ
    IRF6723M2DTR1P

    Tabla de datos

    HEXFET® DirectFET™ Isometric MA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 15A 6.6mOhm @ 15A, 10V 2.35V @ 25µA 14nC @ 4.5V 1380pF @ 15V 2.7W -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET™ MA
    IRFI4019HG-117P

    IRFI4019HG-117P

    MOSFET 2N-CH 150V 8.7A TO220-5

    Infineon Technologies

    3,192
    RFQ
    IRFI4019HG-117P

    Tabla de datos

    - TO-220-5 Full Pack, Formed Leads Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 150V 8.7A 95mOhm @ 5.2A, 10V 4.9V @ 50µA 20nC @ 10V 810pF @ 25V 18W -55°C ~ 150°C (TJ) - - Through Hole TO-220-5 Full-Pak
    FMM110-015X2F

    FMM110-015X2F

    MOSFET 2N-CH 150V 53A I4-PAC

    IXYS

    3,143
    RFQ

    -

    GigaMOS™, HiPerFET™, TrenchT2™ i4-Pac™-5 Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 150V 53A 20mOhm @ 55A, 10V 4.5V @ 250µA 150nC @ 10V 8600pF @ 25V 180W -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    FMP76-010T

    FMP76-010T

    MOSFET N/P-CH 100V 62A I4-PAC

    IXYS

    4,139
    RFQ

    -

    Trench™ i4-Pac™-5 Tube Active MOSFET (Metal Oxide) N and P-Channel - 100V 62A, 54A 11mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 89W, 132W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    IRF9362PBF

    IRF9362PBF

    MOSFET 2P-CH 30V 8A 8SO

    Infineon Technologies

    3,264
    RFQ
    IRF9362PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.4V @ 25µA 39nC @ 10V 1300pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF8910GPBF

    IRF8910GPBF

    MOSFET 2N-CH 20V 10A 8SO

    Infineon Technologies

    4,907
    RFQ
    IRF8910GPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRFH7911TRPBF

    IRFH7911TRPBF

    MOSFET 2N-CH 30V 13A/28A PQFN

    Infineon Technologies

    3,738
    RFQ
    IRFH7911TRPBF

    Tabla de datos

    HEXFET® 18-PowerVQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 13A, 28A 8.6mOhm @ 12A, 10V 2.35V @ 25µA 12nC @ 4.5V 1060pF @ 15V 2.4W, 3.4W -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    SP8M51TB1

    SP8M51TB1

    MOSFET N/P-CH 100V 3A/2.5A 8SOP

    Rohm Semiconductor

    4,970
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 100V 3A, 2.5A - - - - 2W 150°C (TJ) - - Surface Mount 8-SOP
    UPA1890GR-9JG-E1-A

    UPA1890GR-9JG-E1-A

    MOSFET N/P-CH 30V 6A/5A 8PSOP

    Renesas Electronics Corporation

    2,634
    RFQ
    UPA1890GR-9JG-E1-A

    Tabla de datos

    - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 6A, 5A 27mOhm @ 3A, 10V 2.5V @ 1mA 14nC @ 10V 748pF @ 10V 2W - - - Surface Mount 8-PSOP
    UPA1873GR-9JG-E1-A

    UPA1873GR-9JG-E1-A

    MOSFET 2N-CH 20V 6A 8TSSOP

    Renesas Electronics Corporation

    2,264
    RFQ
    UPA1873GR-9JG-E1-A

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6A 23mOhm @ 3A, 4.5V 1.5V @ 1mA 9nC @ 4V 705pF @ 10V 2W - - - Surface Mount 8-TSSOP
    UPA1970TE-T1-AT

    UPA1970TE-T1-AT

    MOSFET 2N-CH 20V 2.2A SC-95

    Renesas Electronics Corporation

    4,419
    RFQ
    UPA1970TE-T1-AT

    Tabla de datos

    - SC-95-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.2A 69mOhm @ 1A, 4.5V 1.5V @ 1mA 2.3nC @ 4V 160pF @ 10V 1.15W - - - Surface Mount SC-95-6, Mini Mold Thin
    UPA672T-T1-A

    UPA672T-T1-A

    MOSFET 2N-CH 50V 6-SUPERMINIMOLD

    Renesas Electronics Corporation

    4,300
    RFQ
    UPA672T-T1-A

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 100mA 20Ohm @ 10mA, 4V - - 6pF @ 3V 200mW - - - Surface Mount 6-SuperMiniMold
    UPA1763G-E1-AT

    UPA1763G-E1-AT

    MOSFET 2N-CH 60V 4.5A 8PSOP

    Renesas Electronics Corporation

    3,241
    RFQ
    UPA1763G-E1-AT

    Tabla de datos

    - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 4.5A 57mOhm @ 2.3A, 4.5V 2.5V @ 1mA 20nC @ 10V 870pF @ 10V 2W - - - Surface Mount 8-PSOP
    UPA1857GR-9JG-E1-A

    UPA1857GR-9JG-E1-A

    MOSFET 2N-CH 60V 3.8A 8TSSOP

    Renesas Electronics Corporation

    4,310
    RFQ
    UPA1857GR-9JG-E1-A

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 3.8A 67mOhm @ 2A, 10V 2.5V @ 1mA 12nC @ 10V 580pF @ 10V 1.7W - - - Surface Mount 8-TSSOP
    ALD1108EPCL

    ALD1108EPCL

    MOSFET 4N-CH 10V 16PDIP

    Advanced Linear Devices Inc.

    3,823
    RFQ
    ALD1108EPCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 25pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    SI1563DH-T1-GE3

    SI1563DH-T1-GE3

    MOSFET N/P-CH 20V SC70-6

    Vishay Siliconix

    4,185
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.13A, 880mA 280mOhm @ 1.13A, 4.5V 1V @ 100µA 2nC @ 4.5V - 570mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI4906DY-T1-GE3

    SI4906DY-T1-GE3

    MOSFET 2N-CH 40V 6.6A 8SOIC

    Vishay Siliconix

    4,458
    RFQ
    SI4906DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 6.6A 39mOhm @ 5A, 10V 2.2V @ 250µA 22nC @ 10V 625pF @ 20V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI5933CDC-T1-GE3

    SI5933CDC-T1-GE3

    MOSFET 2P-CH 20V 3.7A 1206-8

    Vishay Siliconix

    4,731
    RFQ
    SI5933CDC-T1-GE3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.7A 144mOhm @ 2.5A, 4.5V 1V @ 250µA 6.8nC @ 5V 276pF @ 10V 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5947DU-T1-GE3

    SI5947DU-T1-GE3

    MOSFET 2P-CH 20V 6A PPAK CHIPFET

    Vishay Siliconix

    2,282
    RFQ
    SI5947DU-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® ChipFET™ Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 6A 58mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 10V 480pF @ 10V 10.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® ChipFet Dual
    SIZ702DT-T1-GE3

    SIZ702DT-T1-GE3

    MOSFET 2N-CH 30V 16A 6POWERPAIR

    Vishay Siliconix

    4,220
    RFQ
    SIZ702DT-T1-GE3

    Tabla de datos

    TrenchFET® 6-PowerPair™ Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 16A 12mOhm @ 13.8A, 10V 2.5V @ 250µA 21nC @ 10V 790pF @ 15V 27W, 30W -55°C ~ 150°C (TJ) - - Surface Mount 6-PowerPair™
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