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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI4923DY-T1-GE3

    SI4923DY-T1-GE3

    MOSFET 2P-CH 30V 6.2A 8SOIC

    Vishay Siliconix

    2,104
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 6.2A 21mOhm @ 8.3A, 10V 3V @ 250µA 70nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4933DY-T1-GE3

    SI4933DY-T1-GE3

    MOSFET 2P-CH 12V 7.4A 8SOIC

    Vishay Siliconix

    2,482
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 7.4A 14mOhm @ 9.8A, 4.5V 1V @ 500µA 70nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4942DY-T1-GE3

    SI4942DY-T1-GE3

    MOSFET 2N-CH 40V 5.3A 8SOIC

    Vishay Siliconix

    4,099
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 5.3A 21mOhm @ 7.4A, 10V 3V @ 250µA 32nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4944DY-T1-GE3

    SI4944DY-T1-GE3

    MOSFET 2N-CH 30V 9.3A 8SOIC

    Vishay Siliconix

    2,047
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.3A 9.5mOhm @ 12.2A, 10V 3V @ 250µA 21nC @ 4.5V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4952DY-T1-E3

    SI4952DY-T1-E3

    MOSFET 2N-CH 25V 8A 8SOIC

    Vishay Siliconix

    4,942
    RFQ
    SI4952DY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 8A 23mOhm @ 7A, 10V 2.2V @ 250µA 18nC @ 10V 680pF @ 13V 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4965DY-T1-E3

    SI4965DY-T1-E3

    MOSFET 2P-CH 8V 8SOIC

    Vishay Siliconix

    4,564
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V - 21mOhm @ 8A, 4.5V 450mV @ 250µA (Min) 55nC @ 4.5V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4966DY-T1-GE3

    SI4966DY-T1-GE3

    MOSFET 2N-CH 20V 8SOIC

    Vishay Siliconix

    2,994
    RFQ
    SI4966DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V - 25mOhm @ 7.1A, 4.5V 1.5V @ 250µA 50nC @ 4.5V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4967DY-T1-E3

    SI4967DY-T1-E3

    MOSFET 2P-CH 12V 8SOIC

    Vishay Siliconix

    2,281
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V - 23mOhm @ 7.5A, 4.5V 450mV @ 250µA (Min) 55nC @ 10V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4967DY-T1-GE3

    SI4967DY-T1-GE3

    MOSFET 2P-CH 12V 8SOIC

    Vishay Siliconix

    3,421
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V - 23mOhm @ 7.5A, 4.5V 450mV @ 250µA (Min) 55nC @ 10V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4973DY-T1-GE3

    SI4973DY-T1-GE3

    MOSFET 2P-CH 30V 5.8A 8SOIC

    Vishay Siliconix

    2,264
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 5.8A 23mOhm @ 7.6A, 10V 3V @ 250µA 56nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI5504DC-T1-GE3

    SI5504DC-T1-GE3

    MOSFET N/P-CH 30V 2.9A 1206-8

    Vishay Siliconix

    2,057
    RFQ
    SI5504DC-T1-GE3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 2.9A, 2.1A 85mOhm @ 2.9A, 10V 1V @ 250µA (Min) 7.5nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5513DC-T1-GE3

    SI5513DC-T1-GE3

    MOSFET N/P-CH 20V 3.1A 1206-8

    Vishay Siliconix

    4,493
    RFQ

    -

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.1A, 2.1A 75mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5515DC-T1-GE3

    SI5515DC-T1-GE3

    MOSFET N/P-CH 20V 4.4A/3A 1206-8

    Vishay Siliconix

    2,292
    RFQ

    -

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 4.4A, 3A 40mOhm @ 4.4A, 4.5V 1V @ 250µA 7.5nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5903DC-T1-GE3

    SI5903DC-T1-GE3

    MOSFET 2P-CH 20V 2.1A 1206-8

    Vishay Siliconix

    4,986
    RFQ
    SI5903DC-T1-GE3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.1A 155mOhm @ 2.1A, 4.5V 600mV @ 250µA (Min) 6nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5933CDC-T1-E3

    SI5933CDC-T1-E3

    MOSFET 2P-CH 20V 3.7A 1206-8

    Vishay Siliconix

    4,049
    RFQ
    SI5933CDC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.7A 144mOhm @ 2.5A, 4.5V 1V @ 250µA 6.8nC @ 5V 276pF @ 10V 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5944DU-T1-GE3

    SI5944DU-T1-GE3

    MOSFET 2N-CH 40V 6A PPAK CHIPFET

    Vishay Siliconix

    3,290
    RFQ
    SI5944DU-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® ChipFET™ Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 6A 112mOhm @ 3.3A, 10V 3V @ 250µA 6.6nC @ 10V 210pF @ 20V 10W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® ChipFet Dual
    SI6943BDQ-T1-GE3

    SI6943BDQ-T1-GE3

    MOSFET 2P-CH 12V 2.3A 8TSSOP

    Vishay Siliconix

    2,301
    RFQ

    -

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 2.3A 80mOhm @ 2.5A, 4.5V 800mV @ 250µA 10nC @ 4.5V - 800mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI7214DN-T1-GE3

    SI7214DN-T1-GE3

    MOSFET 2N-CH 30V 4.6A PPAK 1212

    Vishay Siliconix

    2,636
    RFQ
    SI7214DN-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.6A 40mOhm @ 6.4A, 10V 3V @ 250µA 6.5nC @ 4.5V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SI7218DN-T1-E3

    SI7218DN-T1-E3

    MOSFET 2N-CH 30V 24A PPAK 1212

    Vishay Siliconix

    4,277
    RFQ
    SI7218DN-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 24A 25mOhm @ 8A, 10V 3V @ 250µA 17nC @ 10V 700pF @ 15V 23W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SI7218DN-T1-GE3

    SI7218DN-T1-GE3

    MOSFET 2N-CH 30V 24A PPAK 1212

    Vishay Siliconix

    2,474
    RFQ
    SI7218DN-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 24A 25mOhm @ 8A, 10V 3V @ 250µA 17nC @ 10V 700pF @ 15V 23W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
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