Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF7751

    IRF7751

    MOSFET 2P-CH 30V 4.5A 8TSSOP

    Infineon Technologies

    2,641
    RFQ
    IRF7751

    Tabla de datos

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 35mOhm @ 4.5A, 10V 2.5V @ 250µA 44nC @ 10V 1464pF @ 25V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    NDS9936

    NDS9936

    MOSFET 2N-CH 30V 5A 8SOIC

    onsemi

    3,521
    RFQ
    NDS9936

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5A 50mOhm @ 5A, 10V 3V @ 250µA 35nC @ 10V 525pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDS6984S

    FDS6984S

    MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

    onsemi

    4,681
    RFQ
    FDS6984S

    Tabla de datos

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A, 8.5A 19mOhm @ 8.5A, 10V 3V @ 250µA 12nC @ 5V 1233pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4310BDY-T1-E3

    SI4310BDY-T1-E3

    MOSFET 2N-CH 30V 7.5A 14SOIC

    Vishay Siliconix

    4,842
    RFQ

    -

    TrenchFET® 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7.5A, 9.8A 11mOhm @ 10A, 10V 3V @ 250µA 18nC @ 4.5V 2370pF @ 15V 1.14W, 1.47W -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
    NDS8947

    NDS8947

    MOSFET 2P-CH 30V 4A 8SOIC

    onsemi

    2,166
    RFQ
    NDS8947

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4A 65mOhm @ 4A, 10V 2.8V @ 250µA 30nC @ 10V 690pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    BSO615CGHUMA1

    BSO615CGHUMA1

    MOSFET N/P-CH 60V 3.1A/2A 8DSO

    Infineon Technologies

    3,307
    RFQ
    BSO615CGHUMA1

    Tabla de datos

    SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.1A, 2A 110mOhm @ 3.1A, 10V 2V @ 20µA 22.5nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    SI4972DY-T1-E3

    SI4972DY-T1-E3

    MOSFET 2N-CH 30V 10.8A 8SOIC

    Vishay Siliconix

    2,034
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10.8A, 7.2A 14.5mOhm @ 6A, 10V 3V @ 250µA 28nC @ 10V 1080pF @ 15V 3.1W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI7842DP-T1-E3

    SI7842DP-T1-E3

    MOSFET 2N-CH 30V 6.3A PPAK SO8

    Vishay Siliconix

    4,250
    RFQ

    -

    LITTLE FOOT® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.3A 22mOhm @ 7.5A, 10V 2.4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7844DP-T1-E3

    SI7844DP-T1-E3

    MOSFET 2N-CH 30V 6.4A PPAK SO8

    Vishay Siliconix

    4,148
    RFQ
    SI7844DP-T1-E3

    Tabla de datos

    - PowerPAK® SO-8 Dual Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.4A 22mOhm @ 10A, 10V 2.4V @ 250µA 20nC @ 10V - 1.4W - - - Surface Mount PowerPAK® SO-8 Dual
    SI7842DP-T1-GE3

    SI7842DP-T1-GE3

    MOSFET 2N-CH 30V 6.3A PPAK SO8

    Vishay Siliconix

    2,989
    RFQ

    -

    LITTLE FOOT® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.3A 22mOhm @ 7.5A, 10V 2.4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7844DP-T1-GE3

    SI7844DP-T1-GE3

    MOSFET 2N-CH 30V 6.4A PPAK SO8

    Vishay Siliconix

    3,504
    RFQ
    SI7844DP-T1-GE3

    Tabla de datos

    - PowerPAK® SO-8 Dual Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.4A 22mOhm @ 10A, 10V 2.4V @ 250µA 20nC @ 10V - 1.4W - - - Surface Mount PowerPAK® SO-8 Dual
    SH8K51GZETB

    SH8K51GZETB

    MOSFET 2N-CH 35V 4A 8SOP

    Rohm Semiconductor

    3,552
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 35V 4A (Ta) 58mOhm @ 4A, 10V 2.8V @ 1mA 5.6nC @ 5V 300pF @ 10V 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    IRF9953

    IRF9953

    MOSFET 2P-CH 30V 2.3A 8SO

    Infineon Technologies

    2,249
    RFQ
    IRF9953

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SI5519DU-T1-GE3

    SI5519DU-T1-GE3

    MOSFET N/P-CH 20V 6A CHIPFET

    Vishay Siliconix

    4,591
    RFQ

    -

    TrenchFET® PowerPAK® ChipFET™ Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 20V 6A 36mOhm @ 6.1A, 4.5V 1.8V @ 250µA 17.5nC @ 10V 660pF @ 10V 10.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® ChipFet Dual
    FDS8949-F085

    FDS8949-F085

    MOSFET 2N-CH 40V 6A 8SOIC

    onsemi

    2,202
    RFQ
    FDS8949-F085

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 6A 29mOhm @ 6A, 10V 3V @ 250µA 11nC @ 5V 955pF @ 20V 2W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    PJQ5844-AU_R2_000A1

    PJQ5844-AU_R2_000A1

    MOSFET 2N-CH 40V 10A 8DFN

    Panjit International Inc.

    4,241
    RFQ
    PJQ5844-AU_R2_000A1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 10A (Ta), 45A (Tc) 8mOhm @ 15A, 10V 2.5V @ 250µA 17nC @ 4.5V 1759pF @ 25V 2W (Ta), 38.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060B-8
    NTHD3102CT1G

    NTHD3102CT1G

    MOSFET N/P-CH 20V 4A CHIPFET

    onsemi

    2
    RFQ
    NTHD3102CT1G

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 4A, 3.1A 45mOhm @ 4.4A, 4.5V 1.2V @ 250µA 7.9nC @ 4.5V 510pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
    FDR8308P

    FDR8308P

    MOSFET 2P-CH 20V 3.2A SUPERSOT-8

    onsemi

    3,597
    RFQ
    FDR8308P

    Tabla de datos

    PowerTrench® 8-LSOP (0.130", 3.30mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.2A 50mOhm @ 3.2A, 4.5V 1.5V @ 250µA 19nC @ 4.5V 1240pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
    FDS6912

    FDS6912

    MOSFET 2N-CH 30V 6A 8SOIC

    onsemi

    3,261
    RFQ
    FDS6912

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 28mOhm @ 6A, 10V 3V @ 250µA 10nC @ 5V 740pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI4511DY-T1-E3

    SI4511DY-T1-E3

    MOSFET N/P-CH 20V 7.2A 8SOIC

    Vishay Siliconix

    3,518
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 7.2A, 4.6A 14.5mOhm @ 9.6A, 10V 1.8V @ 250µA 18nC @ 4.5V - 1.1W - - - Surface Mount 8-SOIC
    Total 5737 Record«Prev1... 209210211212213214215216...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios