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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FDS4953

    FDS4953

    MOSFET 2P-CH 30V 5A 8SOIC

    onsemi

    4,142
    RFQ
    FDS4953

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 5A 55mOhm @ 5A, 10V 3V @ 250µA 9nC @ 5V 528pF @ 15V 900mW -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    FDS8960C

    FDS8960C

    MOSFET N/P-CH 35V 7A/5A 8SOIC

    onsemi

    4,685
    RFQ
    FDS8960C

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 35V 7A, 5A 24mOhm @ 7A, 10V 3V @ 250µA 7.7nC @ 5V 570pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CMSBN6601-HF

    CMSBN6601-HF

    MOSFET 2N-CH 20V 13A 6CSP

    Comchip Technology

    2,999
    RFQ
    CMSBN6601-HF

    Tabla de datos

    - 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 13A (Ta) 11.5mOhm @ 3A, 4.5V 1.3V @ 1mA 25.4nC @ 10V - 2W (Ta) 150°C - - Surface Mount CSPB2718-6
    AOMU66414Q

    AOMU66414Q

    MOSFET 2N-CH 40V 40A 8DFN

    Alpha & Omega Semiconductor Inc.

    4,943
    RFQ

    -

    AlphaSGT™ 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel - 40V 40A (Ta), 85A (Tc) 2.3mOhm @ 20A, 10V 2.4V @ 250µA 60nC @ 10V 3350pF @ 20V 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (8x5)
    BSC750N10NDGATMA1

    BSC750N10NDGATMA1

    MOSFET 2N-CH 100V 3.2A 8TDSON

    Infineon Technologies

    4,714
    RFQ
    BSC750N10NDGATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 3.2A 75mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 720pF @ 50V 26W -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-4
    QS8K2TR

    QS8K2TR

    MOSFET 2N-CH 30V 3.5A TSMT8

    Rohm Semiconductor

    3,743
    RFQ
    QS8K2TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 54mOhm @ 3.5A, 4.5V 1.5V @ 1mA 4.6nC @ 4.5V 285pF @ 10V 1.25W 150°C (TJ) - - Surface Mount TSMT8
    AON6971

    AON6971

    MOSFET 2N-CH 30V 23A/40A 8DFN

    Alpha & Omega Semiconductor Inc.

    2,572
    RFQ
    AON6971

    Tabla de datos

    SRFET™ 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 23A, 40A 5.7mOhm @ 20A, 10V 2.2V @ 250µA 23nC @ 10V 1010pF @ 15V 5W, 4.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    LN100LA-G

    LN100LA-G

    MOSFET 2N-CH 1200V 6LFGA

    Microchip Technology

    2,632
    RFQ
    LN100LA-G

    Tabla de datos

    - 6-VFLGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Cascoded) - 1200V (1.2kV) - 3000Ohm @ 2mA, 2.8V 1.6V @ 10µA - 50pF @ 25V 350mW -25°C ~ 125°C (TJ) - - Surface Mount 6-LFGA (3x3)
    SI6981DQ-T1-E3

    SI6981DQ-T1-E3

    MOSFET 2P-CH 20V 4.1A 8TSSOP

    Vishay Siliconix

    3,445
    RFQ

    -

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.1A 31mOhm @ 4.8A, 4.5V 900mV @ 300µA 25nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI6981DQ-T1-GE3

    SI6981DQ-T1-GE3

    MOSFET 2P-CH 20V 4.1A 8TSSOP

    Vishay Siliconix

    4,329
    RFQ

    -

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.1A 31mOhm @ 4.8A, 4.5V 900mV @ 300µA 25nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI5935DC-T1-E3

    SI5935DC-T1-E3

    MOSFET 2P-CH 20V 3A 1206-8

    Vishay Siliconix

    3,309
    RFQ

    -

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3A 86mOhm @ 3A, 4.5V 1V @ 250µA 8.5nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    IRF7750TRPBF

    IRF7750TRPBF

    MOSFET 2P-CH 20V 4.7A 8TSSOP

    Infineon Technologies

    4,560
    RFQ
    IRF7750TRPBF

    Tabla de datos

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.7A 30mOhm @ 4.7A, 4.5V 1.2V @ 250µA 39nC @ 5V 1700pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SIA914DJ-T1-GE3

    SIA914DJ-T1-GE3

    MOSFET 2N-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    4,873
    RFQ
    SIA914DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 53mOhm @ 3.7A, 4.5V 1V @ 250µA 11.5nC @ 8V 400pF @ 10V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    PJQ5844_R2_00001

    PJQ5844_R2_00001

    MOSFET 2N-CH 40V 10A 8DFN

    Panjit International Inc.

    2,681
    RFQ
    PJQ5844_R2_00001

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 10A (Ta), 45A (Tc) 8mOhm @ 15A, 10V 2.5V @ 250µA 17nC @ 4.5V 1759pF @ 25V 1.7W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060B-8
    BSO4804

    BSO4804

    MOSFET 2N-CH 30V 8A 8DSO

    Infineon Technologies

    2,789
    RFQ
    BSO4804

    Tabla de datos

    OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 20mOhm @ 8A, 10V 2V @ 30µA 17nC @ 5V 870pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    FDS8984-F085

    FDS8984-F085

    MOSFET 2N-CH 30V 7A 8SOIC

    onsemi

    3,903
    RFQ
    FDS8984-F085

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7A 23mOhm @ 7A, 10V 2.5V @ 250µA 13nC @ 10V 635pF @ 15V 1.6W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SP8M6TB

    SP8M6TB

    MOSFET N/P-CH 30V 5A/3.5A 8SOP

    Rohm Semiconductor

    3,146
    RFQ
    SP8M6TB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 5A, 3.5A 51mOhm @ 5A, 10V 2.5V @ 1mA 3.9nC @ 5V 230pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    SI9936BDY-T1-E3

    SI9936BDY-T1-E3

    MOSFET 2N-CH 30V 4.5A 8SOIC

    Vishay Siliconix

    2,022
    RFQ
    SI9936BDY-T1-E3

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 35mOhm @ 6A, 10V 3V @ 250µA 13nC @ 10V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF9956

    IRF9956

    MOSFET 2N-CH 30V 3.5A 8SO

    Infineon Technologies

    4,674
    RFQ
    IRF9956

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9910

    IRF9910

    MOSFET 2N-CH 20V 10A/12A 8SO

    Infineon Technologies

    3,301
    RFQ
    IRF9910

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A, 12A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 900pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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