Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI3951DV-T1-E3

    SI3951DV-T1-E3

    MOSFET 2P-CH 20V 2.7A 6TSOP

    Vishay Siliconix

    2,404
    RFQ
    SI3951DV-T1-E3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.7A 115mOhm @ 2.5A, 4.5V 1.5V @ 250µA 5.1nC @ 5V 250pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SP8K5TB

    SP8K5TB

    MOSFET 2N-CH 30V 3.5A 8SOP

    Rohm Semiconductor

    2,588
    RFQ
    SP8K5TB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 83mOhm @ 3.5A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    DMS3019SSD-13

    DMS3019SSD-13

    MOSFET 2N-CH 30V 7A/5.7A 8SO

    Diodes Incorporated

    3,727
    RFQ
    DMS3019SSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7A, 5.7A 15mOhm @ 9A, 10V 2.4V @ 250µA 42nC @ 10V 1932pF @ 15V 1.19W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SQ4946AEY-T1_GE3

    SQ4946AEY-T1_GE3

    MOSFET 2N-CH 60V 7A 8SOIC

    Vishay Siliconix

    2,872
    RFQ
    SQ4946AEY-T1_GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 7A 40mOhm @ 4.5A, 10V 2.5V @ 250µA 18nC @ 10V 750pF @ 25V 4W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    IRF7102

    IRF7102

    MOSFET 2N-CH 50V 2A 8SO

    Infineon Technologies

    4,179
    RFQ
    IRF7102

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 2A 300mOhm @ 1.5A, 10V 3V @ 250µA 6.6nC @ 10V 120pF @ 25V 2W - - - Surface Mount 8-SO
    STS4C3F60L

    STS4C3F60L

    MOSFET N/P-CH 60V 4A/3A 8SOIC

    STMicroelectronics

    4,278
    RFQ
    STS4C3F60L

    Tabla de datos

    STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 4A, 3A 55mOhm @ 2A, 10V 1V @ 250µA 20.4nC @ 4.5V 1030pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    MMDF2C03HDR2G

    MMDF2C03HDR2G

    MOSFET N/P-CH 30V 4.1A/3A 8SOIC

    onsemi

    3,852
    RFQ
    MMDF2C03HDR2G

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.1A, 3A 70mOhm @ 3A, 10V 3V @ 250µA 16nC @ 10V 630pF @ 24V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    PMWD26UN,518

    PMWD26UN,518

    MOSFET 2N-CH 20V 7.8A 8TSSOP

    NXP USA Inc.

    4,426
    RFQ
    PMWD26UN,518

    Tabla de datos

    TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.8A 30mOhm @ 3.5A, 4.5V 700mV @ 1mA 23.6nC @ 4.5V 1366pF @ 16V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    ZXMC4A16DN8TA

    ZXMC4A16DN8TA

    MOSFET N/P-CH 40V 5.2A 8SO

    Diodes Incorporated

    2,574
    RFQ
    ZXMC4A16DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate 40V 5.2A (Ta), 4.7A (Ta) 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V 1V @ 250mA (Min) 17nC @ 10V 770pF @ 40V, 1000pF @ 20V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    BSC072N03LDGATMA1

    BSC072N03LDGATMA1

    MOSFET 2N-CH 30V 11.5A 8TDSON

    Infineon Technologies

    3,593
    RFQ
    BSC072N03LDGATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 11.5A 7.2mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 3500pF @ 15V 57W -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-4
    SI4914BDY-T1-GE3

    SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC

    Vishay Siliconix

    2,241
    RFQ
    SI4914BDY-T1-GE3

    Tabla de datos

    LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 30V 8.4A, 8A 21mOhm @ 8A, 10V 2.7V @ 250µA 10.5nC @ 4.5V - 2.7W, 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NDS9959

    NDS9959

    MOSFET 2N-CH 50V 2A 8SOIC

    onsemi

    4,430
    RFQ
    NDS9959

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 2A 300mOhm @ 1.5A, 10V 4V @ 250µA 15nC @ 10V 250pF @ 25V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    AON7900

    AON7900

    MOSFET 2N-CH 30V 8A/13A 8DFN

    Alpha & Omega Semiconductor Inc.

    4,426
    RFQ
    AON7900

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A, 13A 21mOhm @ 8A, 10V 2.3V @ 250µA 11nC @ 10V 710pF @ 15V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3.3x3.3)
    IRF7106

    IRF7106

    MOSFET N/P-CH 20V 3A/2.5A 8SO

    Infineon Technologies

    3,838
    RFQ
    IRF7106

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel - 20V 3A, 2.5A 125mOhm @ 1A, 10V 1V @ 250µA 25nC @ 10V 300pF @ 15V 2W - - - Surface Mount 8-SO
    IRF7752

    IRF7752

    MOSFET 2N-CH 30V 4.6A 8TSSOP

    Infineon Technologies

    3,911
    RFQ
    IRF7752

    Tabla de datos

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.6A 30mOhm @ 4.6A, 10V 2V @ 250µA 9nC @ 4.5V 861pF @ 25V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI6562DQ-T1-E3

    SI6562DQ-T1-E3

    MOSFET N/P-CH 20V 8TSSOP

    Vishay Siliconix

    3,041
    RFQ

    -

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V - 30mOhm @ 4.5A, 4.5V 600mV @ 250µA (Min) 25nC @ 4.5V - 1W - - - Surface Mount 8-TSSOP
    SI6562DQ-T1-GE3

    SI6562DQ-T1-GE3

    MOSFET N/P-CH 20V 8TSSOP

    Vishay Siliconix

    4,473
    RFQ

    -

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V - 30mOhm @ 4.5A, 4.5V 600mV @ 250µA (Min) 25nC @ 4.5V - 1W - - - Surface Mount 8-TSSOP
    SQ4946EY-T1-E3

    SQ4946EY-T1-E3

    MOSFET 2N-CH 60V 4.5A 8SOIC

    Vishay Siliconix

    2,240
    RFQ
    SQ4946EY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 4.5A 55mOhm @ 4.5A, 10V 3V @ 250µA 30nC @ 10V - 2.4W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SI4908DY-T1-E3

    SI4908DY-T1-E3

    MOSFET 2N-CH 40V 5A 8SOIC

    Vishay Siliconix

    4,786
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5A 60mOhm @ 4.1A, 10V 2.2V @ 250µA 12nC @ 10V 355pF @ 20V 2.75W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI5511DC-T1-E3

    SI5511DC-T1-E3

    MOSFET N/P-CH 30V 4A/3.6A 1206-8

    Vishay Siliconix

    3,207
    RFQ
    SI5511DC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4A, 3.6A 55mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V 3.1W, 2.6W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    Total 5737 Record«Prev1... 205206207208209210211212...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios