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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMT10H072LDV-13

    DMT10H072LDV-13

    MOSFET 2N-CH 100V 12A PWRDI3333

    Diodes Incorporated

    2,460
    RFQ
    DMT10H072LDV-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 12A (Tc) 66mOhm @ 4.5A, 10V 3V @ 250µA 4.5nC @ 10V 228pF @ 50V 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
    MCQD08N06-TP

    MCQD08N06-TP

    MOSFET 2N-CH 60V 8A 8SOP

    Micro Commercial Co

    3,898
    RFQ
    MCQD08N06-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 8A 22mOhm @ 8A, 10V 3V @ 250µA 41.9nC @ 10V 2000pF @ 30V 9.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    DMT4014LDV-13

    DMT4014LDV-13

    MOSFET 2N-CH 40V 8.5A PWRDI3333

    Diodes Incorporated

    4,110
    RFQ
    DMT4014LDV-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 8.5A (Ta), 26.5A (Tc) 19mOhm @ 20A, 10V 3V @ 250µA 11.2nC @ 10V 750pF @ 20V 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
    IRF9956TRPBFXTMA1

    IRF9956TRPBFXTMA1

    MOSFET 2N-CH 30V 3.5A 8DSO-902

    Infineon Technologies

    3,855
    RFQ

    -

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel - 30V 3.5A (Ta) 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
    DMTH6015LPDW-13

    DMTH6015LPDW-13

    MOSFET 2N-CH 60V 9.4A PWRDI50

    Diodes Incorporated

    4,947
    RFQ
    DMTH6015LPDW-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9.4A (Ta), 36.3A (Tc) 20mOhm @ 10A, 10V 2.5V @ 250µA 14.3nC @ 10V 825pF @ 30V 2.6W (Ta), 39.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type UXD)
    FDMJ1032C

    FDMJ1032C

    MOSFET N/P-CH 20V 3.2A/2.5A SC75

    onsemi

    2,165
    RFQ
    FDMJ1032C

    Tabla de datos

    PowerTrench® 6-WFDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.2A, 2.5A 90mOhm @ 3.2A, 4.5V 1.5V @ 250µA 3nC @ 4.5V 270pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SC-75, MicroFET
    SSM6N37FE,LM

    SSM6N37FE,LM

    MOSFET 2N-CH 20V 0.25A ES6

    Toshiba Semiconductor and Storage

    2,986
    RFQ
    SSM6N37FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 250mA 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
    DMT3009UDT-7

    DMT3009UDT-7

    MOSFET 2N-CH 30V 10.6A 8VDFN

    Diodes Incorporated

    3,437
    RFQ
    DMT3009UDT-7

    Tabla de datos

    - 8-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10.6A (Ta), 30A (Tc) 11.1mOhm @ 11A, 10V 1.8V @ 250µA 14.6nC @ 10V 894pF @ 15V 1.1W (Ta), 16W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount V-DFN3030-8 (Type KS)
    SI4230DY-T1-GE3

    SI4230DY-T1-GE3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    3,226
    RFQ
    SI4230DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 20.5mOhm @ 8A, 10V 3V @ 250µA 25nC @ 10V 950pF @ 15V 3.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    STC5NF20V

    STC5NF20V

    MOSFET 2N-CH 20V 5A 8TSSOP

    STMicroelectronics

    3,822
    RFQ
    STC5NF20V

    Tabla de datos

    STripFET™ II 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5A 40mOhm @ 2.5A, 4.5V 600mV @ 250µA 11.5nC @ 4.5V 460pF @ 15V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    DI035N06PQ2

    DI035N06PQ2

    MOSFET 2N-CH 60V 35A 8TDSON

    Diotec Semiconductor

    4,428
    RFQ
    DI035N06PQ2

    Tabla de datos

    - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 60V 35A (Tc) 15mOhm @ 12A, 10V 2.5V @ 250µA 14.6nC @ 10V 782pF @ 30V 35.7W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TDSON-8-4
    DMNH4026SSDQ-13

    DMNH4026SSDQ-13

    MOSFET 2N-CH 7.5A 8SOIC

    Diodes Incorporated

    2,672
    RFQ
    DMNH4026SSDQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 7.5A (Ta) 24mOhm @ 6A, 10V 3V @ 250µA 8.8nC @ 4.5V 1060pF @ 20V - -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    PMWD19UN,518

    PMWD19UN,518

    MOSFET 2N-CH 30V 5.6A 8TSSOP

    NXP USA Inc.

    4,081
    RFQ
    PMWD19UN,518

    Tabla de datos

    TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.6A 23mOhm @ 3.5A, 4.5V 700mV @ 1mA 28nC @ 5V 1478pF @ 10V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    PMWD30UN,518

    PMWD30UN,518

    MOSFET 2N-CH 30V 5A 8TSSOP

    NXP USA Inc.

    4,385
    RFQ
    PMWD30UN,518

    Tabla de datos

    TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5A 33mOhm @ 3.5A, 4.5V 700mV @ 1mA 28nC @ 5V 1478pF @ 10V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    DMT6017LDV-13

    DMT6017LDV-13

    MOSFET 2N-CH 25.3A PWRDI3333

    Diodes Incorporated

    4,682
    RFQ
    DMT6017LDV-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 25.3A (Tc) 22mOhm @ 6A, 10V 2.3V @ 250µA - - - -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
    DMTH6015LDVWQ-13

    DMTH6015LDVWQ-13

    MOSFET 2N-CH 60V 9.2A PWRDI3333

    Diodes Incorporated

    2,253
    RFQ
    DMTH6015LDVWQ-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9.2A (Ta), 24.5A (Tc) 20.5mOhm @ 10A, 10V 2.5V @ 250µA 14.3nC @ 10V 825pF @ 30V 1.46W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI3333-8 (Type UXD)
    DMT10H032LDVW-13

    DMT10H032LDVW-13

    MOSFET 2N-CH 100V 6.9A PWRDI3333

    Diodes Incorporated

    4,225
    RFQ

    -

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.9A (Ta) 32mOhm @ 5A, 10V 2.5V @ 250µA 11.9nC @ 10V 683pF @ 50V 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (SWP) (Type UXD)
    DMTH10H032LDVW-13

    DMTH10H032LDVW-13

    MOSFET 2N-CH 100V 7.2A PWRDI3333

    Diodes Incorporated

    3,361
    RFQ

    -

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 7.2A (Ta) 32mOhm @ 5A, 10V 2.5V @ 250µA 11.9nC @ 10V 683pF @ 50V 1.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI3333-8 (SWP) (Type UXD)
    DMTH10H032SDVW-13

    DMTH10H032SDVW-13

    MOSFET 2N-CH 100V 6.2A PWRDI3333

    Diodes Incorporated

    2,132
    RFQ

    -

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.2A (Ta) 35mOhm @ 5A, 10V 4V @ 250µA 8nC @ 10V 544pF @ 50V 1.4W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI3333-8 (SWP) (Type UXD)
    AO8808A

    AO8808A

    MOSFET 2N-CH 20V 8TSSOP

    Alpha & Omega Semiconductor Inc.

    4,579
    RFQ
    AO8808A

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V - 14mOhm @ 8A, 10V 1V @ 250µA 17.9nC @ 4.5V 1810pF @ 10V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
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