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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMC3016LNS-13

    DMC3016LNS-13

    MOSFET N/P-CH 30V 9A PWRDI3333

    Diodes Incorporated

    4,250
    RFQ
    DMC3016LNS-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 9A (Ta), 6.8A (Ta) 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V 2V @ 250µA 9.5nC @ 4.5V 1184pF @ 15V, 1188pF @ 15V 1.3W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI3333-8
    AON5820

    AON5820

    MOSFET 2N-CH 20V 10A 6DFN

    Alpha & Omega Semiconductor Inc.

    4,570
    RFQ
    AON5820

    Tabla de datos

    - 6-WFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 10A 9.5mOhm @ 10A, 4.5V 1V @ 250µA 15nC @ 4.5V 1510pF @ 10V 1.7W -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN-EP (2x5)
    DMN3032LFDBWQ-13

    DMN3032LFDBWQ-13

    MOSFET 2N-CH 30V 5.5A 6UDFN

    Diodes Incorporated

    2,100
    RFQ
    DMN3032LFDBWQ-13

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 5.5A (Ta) 30mOhm @ 5.8A, 10V 2V @ 250µA 10.6nC @ 10V 500pF @ 15V 820mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount U-DFN2020-6 (SWP) Type B
    PJQ5850-AU_R2_000A1

    PJQ5850-AU_R2_000A1

    MOSFET 2N-CH 40V 5A 8DFN

    Panjit International Inc.

    3,794
    RFQ
    PJQ5850-AU_R2_000A1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5A (Ta), 14A (Tc) 33mOhm @ 8A, 10V 2.5V @ 250µA 4.4nC @ 4.5V 425pF @ 25V 2W (Ta), 14.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060B-8
    DI016N06PQ2-AQ

    DI016N06PQ2-AQ

    MOSFET 2N-CH 60V 16A 8TDSON

    Diotec Semiconductor

    4,668
    RFQ
    DI016N06PQ2-AQ

    Tabla de datos

    - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 60V 16A (Tc) 33mOhm @ 15A, 10V 2.5V @ 250µA 19nC @ 10V 1260pF @ 30V 16.7W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TDSON-8-4
    USB10H

    USB10H

    MOSFET 2P-CH 20V 1.9A SSOT6

    onsemi

    3,957
    RFQ
    USB10H

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.9A 170mOhm @ 1.9A, 4.5V 1.5V @ 250µA 4.2nC @ 4.5V 441pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    DMN16M7UCA6-7

    DMN16M7UCA6-7

    MOSFET 2N-CH 12V X4-DSN2718

    Diodes Incorporated

    3,779
    RFQ
    DMN16M7UCA6-7

    Tabla de datos

    - 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source - 12V 19.2A (Ta) 3.8mOhm @ 3A, 4.5V 1.3V @ 1mA 45.4nC @ 6V 2333pF @ 6V 1W -55°C ~ 150°C (TJ) - - Surface Mount X4-DSN2718-6
    XP3A020M

    XP3A020M

    MOSFET 2N-CH 30V 7.8A 8SO

    YAGEO XSEMI

    2,027
    RFQ
    XP3A020M

    Tabla de datos

    XP3A020 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 7.8A (Ta) 20mOhm @ 7A, 10V 2.5V @ 1mA 8nC @ 4.5V 880pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    DMT3006LDV-13

    DMT3006LDV-13

    MOSFET 2N-CH 30V 25A PWRDI3333

    Diodes Incorporated

    2,799
    RFQ
    DMT3006LDV-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 25A (Tc) 10mOhm @ 9A, 10V 3V @ 250µA 16.7nC @ 10V 1155pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
    AO4613

    AO4613

    MOSFET N/P-CH 30V 8SOIC

    Alpha & Omega Semiconductor Inc.

    2,912
    RFQ
    AO4613

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 24mOhm @ 7.2A, 10V 3V @ 250µA 15nC @ 10V 630pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    DMN2016UFX-7

    DMN2016UFX-7

    MOSFET 2N-CH 24V 9.9A 4VDFN

    Diodes Incorporated

    4,164
    RFQ
    DMN2016UFX-7

    Tabla de datos

    - 4-VFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 24V 9.9A (Ta) 15mOhm @ 6.5A, 4.5V 1.5V @ 250µA 14nC @ 4.5V 950pF @ 10V 1.07W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount V-DFN2050-4
    DMTH4014LDVW-7

    DMTH4014LDVW-7

    MOSFET 2N-CH 40V 10.2A PWRDI3333

    Diodes Incorporated

    4,081
    RFQ
    DMTH4014LDVW-7

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 10.2A (Ta), 27.5A (Tc) 15mOhm @ 20A, 10V 3V @ 250µA 11.2nC @ 10V 750pF @ 20V 1.16W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXD)
    AON3816

    AON3816

    MOSFET 2N-CH 20V 8DFN

    Alpha & Omega Semiconductor Inc.

    2,915
    RFQ
    AON3816

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V - 22mOhm @ 4A, 4.5V 1.1V @ 250µA 13nC @ 4.5V 1100pF @ 10V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
    DMT3022UEV-7

    DMT3022UEV-7

    MOSFET 2N-CH 30V 17A PWRDI3333

    Diodes Incorporated

    3,333
    RFQ
    DMT3022UEV-7

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 17A (Tc) 22mOhm @ 11A, 10V 1.8V @ 250µA 13.9nC @ 10V 903pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXD)
    DMT3006LPB-13

    DMT3006LPB-13

    MOSFET 2N-CH 11A POWERDI5060-8

    Diodes Incorporated

    2,920
    RFQ
    DMT3006LPB-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc) 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V 3V @ 250µA - - - -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (Type S)
    G100C04D52

    G100C04D52

    MOSFET 40V 40A/24A 8DFN

    Goford Semiconductor

    2,600
    RFQ
    G100C04D52

    Tabla de datos

    - 8-PowerTDFN Active MOSFET (Metal Oxide) - - 40V 40A (Tc), 24A (Tc) 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V 2.5V @ 250µA 29nC @ 10V, 45nC @ 10V 2213pF @ 20V, 2451pF @ 20V 65W (Tc), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
    DMC1028UFDB-13

    DMC1028UFDB-13

    MOSFET N/P-CH 12V/20V 6A 6UDFN

    Diodes Incorporated

    2,241
    RFQ
    DMC1028UFDB-13

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 12V, 20V 6A, 3.4A 25mOhm @ 5.2A, 4.5V 1V @ 250µA 18.5nC @ 8V 787pF @ 6V 1.36W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMC1029UFDB-13

    DMC1029UFDB-13

    MOSFET N/P-CH 12V 5.6A 6UDFN

    Diodes Incorporated

    4,405
    RFQ
    DMC1029UFDB-13

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 12V 5.6A, 3.8A 29mOhm @ 5A, 4.5V 1V @ 250µA 19.6nC @ 8V 914pF @ 6V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    AON5802A

    AON5802A

    MOSFET 2N-CH 30V 7.2A 6DFN

    Alpha & Omega Semiconductor Inc.

    4,300
    RFQ
    AON5802A

    Tabla de datos

    - 6-WFDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 7.2A 20mOhm @ 7.2A, 4.5V 1.5V @ 250µA 10.7nC @ 4.5V 1115pF @ 15V 1.7W -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN-EP (2x5)
    DMN2011UCA6-7

    DMN2011UCA6-7

    MOSFET 2N-CH 22V 9A X4-DSN1818-6

    Diodes Incorporated

    3,285
    RFQ

    -

    - 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 22V 9A (Ta) 6.5mOhm @ 5A, 4.5V 1.3V @ 1mA 20nC @ 4.5V 1580pF @ 12V 800mW -55°C ~ 150°C (TJ) - - Surface Mount X4-DSN1818-6
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