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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MCQD09N06Y-TP

    MCQD09N06Y-TP

    MOSFET 2N-CH 60V 9A 8SOP

    Micro Commercial Co

    3,464
    RFQ
    MCQD09N06Y-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 9A (Ta) 20mOhm @ 9A, 10V 2.5V @ 250µA 16.5nC @ 10V 873pF @ 30V 1.7W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    PJQ4606_R1_00001

    PJQ4606_R1_00001

    MOSFET N/P-CH 30V 7.6A 8DFN

    Panjit International Inc.

    2,685
    RFQ
    PJQ4606_R1_00001

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V 2.5V @ 250µA 4.8nC @ 4.5V, 7.8nC @ 4.5V 429pF @ 25V, 846pF @ 15V 2W (Ta), 18W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN3030B-8
    AOD661

    AOD661

    MOSFET 2N-CH 30V 12A TO252-4L

    Alpha & Omega Semiconductor Inc.

    4,033
    RFQ
    AOD661

    Tabla de datos

    - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 12A (Tc) 16.5mOhm @ 12A, 10V, 22.5mOhm @ 9.7A, 10V 2.5V @ 250µA 10nC @ 4.5V, 15nC @ 4.5V 760pF @ 15V 15.6W, 31W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
    DMC6070LND-13

    DMC6070LND-13

    MOSFET N/P-CH 60V 3.1A PWRDI3333

    Diodes Incorporated

    4,110
    RFQ
    DMC6070LND-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 3.1A, 2.4A 85mOhm @ 1.5A, 10V 3V @ 250µA 11.5nC @ 10V 731pF @ 20V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXB)
    DMT6015LPDW-13

    DMT6015LPDW-13

    MOSFET 2N-CH 60V 9.4A PWRDI50

    Diodes Incorporated

    3,450
    RFQ
    DMT6015LPDW-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9.4A (Ta), 17.1A (Tc) 18mOhm @ 10A, 10V 2.5V @ 250µA 15.7nC @ 10V 808pF @ 30V 2.4W (Ta), 7.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (Type UXD)
    DMTH6015LDVW-13

    DMTH6015LDVW-13

    MOSFET 2N-CH 60V 9.2A PWRDI3333

    Diodes Incorporated

    2,919
    RFQ
    DMTH6015LDVW-13

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9.2A (Ta), 24.5A (Tc) 20.5mOhm @ 10A, 10V 2.5V @ 250µA 14.3nC @ 10V 825pF @ 30V 1.46W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXD)
    TPC8211(TE12L,Q,M)

    TPC8211(TE12L,Q,M)

    MOSFET 2N-CH 30V 5.5A 8SOP

    Toshiba Semiconductor and Storage

    2,249
    RFQ
    TPC8211(TE12L,Q,M)

    Tabla de datos

    - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 36mOhm @ 3A, 10V 2.5V @ 1mA 25nC @ 10V 1250pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    DMN3013LDG-13

    DMN3013LDG-13

    MOSFET 2N-CH 30V 9.5A PWRDI3333

    Diodes Incorporated

    3,487
    RFQ
    DMN3013LDG-13

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 9.5A (Ta), 15A (Tc) 14.3mOhm @ 4A, 8V 1.2V @ 250µA 5.7nC @ 4.5V 600pF @ 15V 2.16W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
    DMN3013LFG-13

    DMN3013LFG-13

    MOSFET 2N-CH 30V 9.5A PWRDI3333

    Diodes Incorporated

    2,688
    RFQ
    DMN3013LFG-13

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 9.5A (Ta), 15A (Tc) 14.3mOhm @ 4A, 8V 1.2V @ 250µA 5.7nC @ 4.5V 600pF @ 15V 2.16W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
    HUFA76404DK8T

    HUFA76404DK8T

    MOSFET 2N-CH 62V 3.6A 8SOIC

    onsemi

    3,980
    RFQ
    HUFA76404DK8T

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 62V 3.6A 110mOhm @ 3.6A, 10V 3V @ 250µA 4.9nC @ 5V 250pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CWDM305PD TR13 PBFREE

    CWDM305PD TR13 PBFREE

    MOSFET 2P-CH 30V 5.3A 8SOIC

    Central Semiconductor Corp

    3,833
    RFQ
    CWDM305PD TR13 PBFREE

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 5.3A 72mOhm @ 2.7A, 10V 3V @ 250µA 7nC @ 5V 590pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTMD5838NLR2G

    NTMD5838NLR2G

    MOSFET 2N-CH 40V 7.4A 8SOIC

    onsemi

    2,225
    RFQ
    NTMD5838NLR2G

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 7.4A 25mOhm @ 7A, 10V 3V @ 250µA 17nC @ 10V 785pF @ 20V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI3909DV-T1-E3

    SI3909DV-T1-E3

    MOSFET 2P-CH 20V 6TSOP

    Vishay Siliconix

    3,629
    RFQ

    -

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V - 200mOhm @ 1.8A, 4.5V 500mV @ 250µA (Min) 4nC @ 4.5V - 1.15W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SI3909DV-T1-GE3

    SI3909DV-T1-GE3

    MOSFET 2P-CH 20V 6TSOP

    Vishay Siliconix

    3,470
    RFQ

    -

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V - 200mOhm @ 1.8A, 4.5V 500mV @ 250µA (Min) 4nC @ 4.5V - 1.15W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SIA911DJ-T1-GE3

    SIA911DJ-T1-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    4,463
    RFQ

    -

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 4.5A 94mOhm @ 2.8A, 4.5V 1V @ 250µA 12.8nC @ 8V 355pF @ 10V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    DMC10H220LSD-13

    DMC10H220LSD-13

    MOSFET N/P-CH 100V 1.7A 8SO

    Diodes Incorporated

    3,905
    RFQ
    DMC10H220LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 100V 1.7A (Ta) 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V 3V @ 250µA 8.3nC @ 10V, 17.5nC @ 10V 340pF @ 50V, 1030pF @ 50V 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SH8M11TB1

    SH8M11TB1

    MOSFET N/P-CH 30V 3.5A 8SOP

    Rohm Semiconductor

    4,136
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 3.5A 98mOhm @ 3.5A, 10V 2.5V @ 1mA 1.9nC @ 5V 85pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    OP533,005

    OP533,005

    MOSFET

    WeEn Semiconductors

    3,962
    RFQ

    -

    * - Tray Active - - - - - - - - - - - - - - -
    AOD606

    AOD606

    MOSFET N/P-CH 40V 8A TO252-4L

    Alpha & Omega Semiconductor Inc.

    2,404
    RFQ
    AOD606

    Tabla de datos

    - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 40V 8A 33mOhm @ 8A, 10V 3V @ 250µA 9.2nC @ 10V 404pF @ 20V 1.6W, 1.7W -55°C ~ 175°C (TJ) - - Surface Mount TO-252-4L
    DMTH6015LDVW-7

    DMTH6015LDVW-7

    MOSFET 2N-CH 60V 9.2A PWRDI3333

    Diodes Incorporated

    4,135
    RFQ
    DMTH6015LDVW-7

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9.2A (Ta), 24.5A (Tc) 20.5mOhm @ 10A, 10V 2.5V @ 250µA 14.3nC @ 10V 825pF @ 30V 1.46W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXD)
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