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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTMC120AM09CT3AG

    APTMC120AM09CT3AG

    MOSFET 2N-CH 1200V 295A SP3

    Microchip Technology

    0
    RFQ
    APTMC120AM09CT3AG

    Tabla de datos

    - SP3 Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 295A (Tc) 9mOhm @ 200A, 20V 2.4V @ 40mA (Typ) 644nC @ 20V 11000pF @ 1000V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTMC170AM30CT1AG

    APTMC170AM30CT1AG

    MOSFET 2N-CH 1700V 100A SP1

    Microchip Technology

    0
    RFQ
    APTMC170AM30CT1AG

    Tabla de datos

    - SP1 Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 100A (Tc) 30mOhm @ 100A, 20V 2.3V @ 5mA (Typ) 380nC @ 20V 6160pF @ 1000V 700W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTMC120TAM17CTPAG

    APTMC120TAM17CTPAG

    MOSFET 6N-CH 1200V 147A SP6-P

    Microchip Technology

    0
    RFQ
    APTMC120TAM17CTPAG

    Tabla de datos

    - SP6 Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 147A (Tc) 17mOhm @ 100A, 20V 2.4V @ 20mA (Typ) 322nC @ 20V 5600pF @ 1000V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTMC60TLM14CAG

    APTMC60TLM14CAG

    MOSFET 4N-CH 1200V 219A SP6

    Microchip Technology

    0
    RFQ
    APTMC60TLM14CAG

    Tabla de datos

    - SP6 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 219A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTMC120TAM12CTPAG

    APTMC120TAM12CTPAG

    MOSFET 6N-CH 1200V 220A SP6-P

    Microchip Technology

    0
    RFQ
    APTMC120TAM12CTPAG

    Tabla de datos

    - SP6 Bulk Last Time Buy Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 220A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTMC120HM17CT3AG

    APTMC120HM17CT3AG

    MOSFET 4N-CH 1200V 147A SP3

    Microchip Technology

    0
    RFQ
    APTMC120HM17CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 147A (Tc) 17mOhm @ 100A, 20V 4V @ 30mA 332nC @ 5V 5576pF @ 1000V 750W -40°C ~ 175°C (TJ) - - Chassis Mount SP3
    APTMC120HR11CT3AG

    APTMC120HR11CT3AG

    MOSFET 2N-CH 1200V 26A SP3

    Microchip Technology

    0
    RFQ
    APTMC120HR11CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 26A (Tc) 98mOhm @ 20A, 20V 3V @ 5mA 62nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTMC120TAM34CT3AG

    APTMC120TAM34CT3AG

    MOSFET 6N-CH 1200V 74A SP3

    Microchip Technology

    0
    RFQ

    -

    - Module Bulk Last Time Buy Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 74A (Tc) 34mOhm @ 50A, 20V 4V @ 15mA 161nC @ 5V 2788pF @ 1000V 375W -40°C ~ 175°C (TJ) - - Chassis Mount SP3
    MSCMC120AM02CT6LIAG

    MSCMC120AM02CT6LIAG

    MOSFET 2N-CH 1200V 742A SP6C LI

    Microchip Technology

    0
    RFQ
    MSCMC120AM02CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V 33500pF @ 1000V 3200W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC120AM04CT6LIAG

    MSCMC120AM04CT6LIAG

    MOSFET 2N-CH 1200V 388A SP6C LI

    Microchip Technology

    0
    RFQ
    MSCMC120AM04CT6LIAG

    Tabla de datos

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V 16700pF @ 1000V 1754W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    Total 303 Record«Prev1... 25262728293031Next»
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