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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTC60HM70SCTG

    APTC60HM70SCTG

    MOSFET 4N-CH 600V 39A SP4

    Microchip Technology

    0
    RFQ
    APTC60HM70SCTG

    Tabla de datos

    CoolMOS™ SP4 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTC60HM70T1G

    APTC60HM70T1G

    MOSFET 4N-CH 600V 39A SP1

    Microchip Technology

    0
    RFQ
    APTC60HM70T1G

    Tabla de datos

    - SP1 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTMC60TL11CT3AG

    APTMC60TL11CT3AG

    MOSFET 4N-CH 1200V 28A SP3

    Microchip Technology

    0
    RFQ
    APTMC60TL11CT3AG

    Tabla de datos

    - SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 28A (Tc) 98mOhm @ 20A, 20V 2.2V @ 1mA 49nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTMC120AM08CD3AG

    APTMC120AM08CD3AG

    MOSFET 2N-CH 1200V 250A D3

    Microchip Technology

    0
    RFQ
    APTMC120AM08CD3AG

    Tabla de datos

    - D-3 Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 10mOhm @ 200A, 20V 2.2V @ 10mA (Typ) 490nC @ 20V 9500pF @ 1000V 1100W -40°C ~ 150°C (TJ) - - Chassis Mount D3
    APTMC120AM16CD3AG

    APTMC120AM16CD3AG

    MOSFET 2N-CH 1200V 131A D3

    Microchip Technology

    0
    RFQ
    APTMC120AM16CD3AG

    Tabla de datos

    - D-3 Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 131A (Tc) 20mOhm @ 100A, 20V 2.2V @ 5mA (Typ) 246nC @ 20V 4750pF @ 1000V 625W -40°C ~ 150°C (TJ) - - Chassis Mount D3
    APTMC120AM55CT1AG

    APTMC120AM55CT1AG

    MOSFET 2N-CH 1200V 55A SP1

    Microchip Technology

    0
    RFQ
    APTMC120AM55CT1AG

    Tabla de datos

    - SP1 Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 55A (Tc) 49mOhm @ 40A, 20V 2.2V @ 2mA (Typ) 98nC @ 20V 1900pF @ 1000V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTMC120TAM33CTPAG

    APTMC120TAM33CTPAG

    MOSFET 6N-CH 1200V 78A SP6-P

    Microchip Technology

    0
    RFQ
    APTMC120TAM33CTPAG

    Tabla de datos

    - SP6 Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 78A (Tc) 33mOhm @ 60A, 20V 2.2V @ 3mA (Typ) 148nC @ 20V 2850pF @ 1000V 370W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTMC60TLM55CT3AG

    APTMC60TLM55CT3AG

    MOSFET 4N-CH 1200V 48A SP3

    Microchip Technology

    0
    RFQ
    APTMC60TLM55CT3AG

    Tabla de datos

    - SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 48A (Tc) 49mOhm @ 40A, 20V 2.2V @ 2mA (Typ) 98nC @ 20V 1900pF @ 1000V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTMC120AM20CT1AG

    APTMC120AM20CT1AG

    MOSFET 2N-CH 1200V 143A SP1

    Microchip Technology

    0
    RFQ
    APTMC120AM20CT1AG

    Tabla de datos

    - SP1 Bulk Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 143A (Tc) 17mOhm @ 100A, 20V 2.3V @ 2mA (Typ) 360nC @ 20V 5960pF @ 1000V 600W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTMC120AM12CT3AG

    APTMC120AM12CT3AG

    MOSFET 2N-CH 1200V 220A SP3

    Microchip Technology

    0
    RFQ
    APTMC120AM12CT3AG

    Tabla de datos

    - SP3 Bulk Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 220A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    Total 303 Record«Prev1... 2425262728293031Next»
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