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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTM60A11FT1G

    APTM60A11FT1G

    MOSFET 2N-CH 600V 40A SP1

    Microchip Technology

    0
    RFQ
    APTM60A11FT1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 40A 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC60AM45T1G

    APTC60AM45T1G

    MOSFET 2N-CH 600V 49A SP1

    Microchip Technology

    0
    RFQ
    APTC60AM45T1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM60H23FT1G

    APTM60H23FT1G

    MOSFET 4N-CH 600V 20A SP1

    Microchip Technology

    0
    RFQ
    APTM60H23FT1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 20A 276mOhm @ 17A, 10V 5V @ 1mA 165nC @ 10V 5316pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC80DDA15T3G

    APTC80DDA15T3G

    MOSFET 2N-CH 800V 28A SP3

    Microchip Technology

    0
    RFQ
    APTC80DDA15T3G

    Tabla de datos

    - SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC80H15T1G

    APTC80H15T1G

    MOSFET 4N-CH 800V 28A SP1

    Microchip Technology

    0
    RFQ
    APTC80H15T1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC60DDAM45T1G

    APTC60DDAM45T1G

    MOSFET 2N-CH 600V 49A SP1

    Microchip Technology

    0
    RFQ
    APTC60DDAM45T1G

    Tabla de datos

    CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC60VDAM45T1G

    APTC60VDAM45T1G

    MOSFET 2N-CH 600V 49A SP1

    Microchip Technology

    0
    RFQ
    APTC60VDAM45T1G

    Tabla de datos

    CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM120H140FT1G

    APTM120H140FT1G

    MOSFET 4N-CH 1200V 8A SP1

    Microchip Technology

    0
    RFQ
    APTM120H140FT1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 8A 1.68Ohm @ 7A, 10V 5V @ 1mA 145nC @ 10V 3812pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC60AM35T1G

    APTC60AM35T1G

    MOSFET 2N-CH 600V 72A SP1

    Microchip Technology

    0
    RFQ
    APTC60AM35T1G

    Tabla de datos

    - SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM50DDA10T3G

    APTM50DDA10T3G

    MOSFET 2N-CH 500V 37A SP3

    Microchip Technology

    0
    RFQ
    APTM50DDA10T3G

    Tabla de datos

    - SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 500V 37A 120mOhm @ 18.5A, 10V 5V @ 1mA 96nC @ 10V 4367pF @ 25V 312W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    Total 303 Record«Prev1... 1213141516171819...31Next»
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