Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S3D10065EDIODE SIL CARBIDE 650V 10A DPAK |
2,500 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 621pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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VS-3C12ET07T-M3650 V POWER SIC GEN 3 MERGED PIN |
3,048 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 65 µA @ 650 V | 535pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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FFSP1265ADIODE SIL CARB 650V 15A TO220-2L |
768 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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FFSD1065ADIODE SIL CARBIDE 650V 18A DPAK |
6,468 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 18A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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FFSB1065B-F085DIODE SIL CARBIDE 650V 27A D2PAK |
1,530 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 27A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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S3D10065GDIODE SIL CARBIDE 650V 10A D2PAK |
496 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 621pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
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1N5617E3DIODE GEN PURP 400V 1A A AXIAL |
194 |
|
![]() Tabla de datos |
- | A, Axial | Bag | Active | Standard | 400 V | 1A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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C6D08065Q-TRDIODE SIL CARBIDE 650V 28A 4QFN |
2,110 |
|
![]() Tabla de datos |
- | 4-PowerVQFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 28A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | 4-QFN (8x8) | -55°C ~ 175°C |
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FFSP1065ADIODE SIL CARB 650V 15A TO220-2L |
1,506 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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IDDD10G65C6XTMA1DIODE SIL CARB 650V 29A HDSOP-10 |
1,323 |
|
![]() Tabla de datos |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | - | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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STPSC12065GY-TRDIODE SIL CARBIDE 650V 12A D2PAK |
770 |
|
![]() Tabla de datos |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 750pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
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SICF0860P-BPDIODE SIL CARB 650V 8A ITO220AC |
4,940 |
|
![]() Tabla de datos |
- | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | 30pF @ 400V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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STTH60RQ06WLDIODE GEN PURP 600V 60A DO247 LL |
475 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.95 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 80 µA @ 600 V | - | - | - | Through Hole | DO-247 LL | 175°C (Max) |
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SICF1060P-BPDIODE SIL CARB 650V 10A ITO220AC |
4,983 |
|
![]() Tabla de datos |
- | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | 452pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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FFSB0865ADIODE SIC 650V 15.4A D2PAK-3 |
800 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15.4A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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UJ3D1210K2DIODE SIL CARB 1.2KV 10A TO247-2 |
7,101 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
1N4247DIODE GEN PURP 600V 1A AXIAL |
338 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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RFV30TG6SGC9DIODE GP 600V 30A TO220ACFP |
822 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 2.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220ACFP | 150°C |
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MUR60120B-BPDIODE GEN PURP 1.2KV 60A TO247AD |
986 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 15 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-E5PX6012LHN3DIODE GEN PURP 1.2KV 60A TO247AD |
277 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |