Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STPSC8H065BY-TRDIODE SIL CARBIDE 650V 8A DPAK |
4,209 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | - | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 414pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DPAK | -40°C ~ 175°C |
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STPSC10065GY-TRDIODE SIL CARBIDE 650V 10A D2PAK |
621 |
|
![]() Tabla de datos |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
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FFSM0465ADIODE SIL CARBIDE 650V 4A 4PQFN |
2,430 |
|
![]() Tabla de datos |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 247pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
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VS-35APF06LHM3DIODE GEN PURP 600V 35A TO247AD |
487 |
|
![]() Tabla de datos |
- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 600 V | 35A | 1.46 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -40°C ~ 150°C |
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RFUH20TF6SC9DIODE GEN PURP 600V 20A TO220NFM |
932 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220NFM | 150°C |
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FFSB1065BDIODE SIL CARB 650V 27A D2PAK-2 |
686 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 27A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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IDK05G120C5XTMA1DIODE SIC 1.2KV 19.1A TO263-1 |
955 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19.1A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | - | 33 µA @ 1200 V | 301pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
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STPSC8H065DLFDIODE SIL CARB 650V 8A POWERFLAT |
5,264 |
|
![]() Tabla de datos |
ECOPACK®2 | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 460pF @ 0V, 1MHz | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
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DSEI12-12AZ-TUBDIODE GEN PURP 1.2KV 11A TO263HV |
1,270 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 11A | 2.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 1200 V | 6pF @ 600V, 1MHz | - | - | Surface Mount | TO-263HV | -40°C ~ 150°C |
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SCS304AJTLLDIODE SIL CARBIDE 650V 4A LPTL |
974 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
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S3D10065IDIODE SIL CARB 650V 10A TO220 |
125 |
|
![]() Tabla de datos |
- | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 621pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
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VS-E5PH6006LHN3DIODE GEN PURP 600V 60A TO247AD |
183 |
|
![]() Tabla de datos |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 54 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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S3D10065D1DIODE SIL CARB 650V 10A TO247AD |
215 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 621pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
CDLL5818DIODE SCHOTTKY 30V 1A DO213AB |
190 |
|
![]() Tabla de datos |
- | DO-213AB, MELF | Bulk | Active | Schottky | 30 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 150°C |
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VS-45APS12LHM3DIODE GEN PURP 1.2KV 45A TO247AD |
179 |
|
![]() Tabla de datos |
- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 1200 V | 45A | 1.14 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -40°C ~ 150°C |
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VS-3C06ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN |
1,541 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 35 µA @ 650 V | 255pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-45APS16LHM3DIODES - TO-247-E3 |
642 |
|
![]() Tabla de datos |
- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 1600 V | 45A | 1.16 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -40°C ~ 150°C |
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S4D10120FDIODE SIC 1.2KV 10A ITO220AC |
788 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 772pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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FFSM0665ADIODE SIL CARBIDE 650V 8A 4PQFN |
2,860 |
|
![]() Tabla de datos |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 365pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
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FFSB0665B-F085DIODE SIL CARB 650V 8A D2PAK-2 |
910 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |