Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-E5TX1512S2LHM3DIODE GEN PURP 1.2KV 15A TO263AB Vishay General Semiconductor - Diodes Division |
694 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 15A | 3.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 77.5 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-C4PU6006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
500 |
|
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FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 1.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-EPX3007L-N3DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division |
499 |
|
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- | TO-247-2 | Tube | Active | Standard | 650 V | 30A | 2.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-8EWS12S-M3DIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division |
2,945 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 1200 V | 8A | 1.1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
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VS-E5TX2112S2LHM320A, 1200V, "X" SERIES GEN 5 FRE Vishay General Semiconductor - Diodes Division |
835 |
|
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FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 20A | 3.6 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-E4PH6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
456 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 68 ns | 50 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-3C08ET07T-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
1,934 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-E5TX3012S2L-M3DIODE GEN PURP 1.2KV 30A TO263AB Vishay General Semiconductor - Diodes Division |
1,540 |
|
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FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-EPU6006-N3DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
475 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
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VS-10ETF10FP-M3DIODE GP 1KV 10A TO220-2FP Vishay General Semiconductor - Diodes Division |
442 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |