Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-E5TX3006THN3DIODE GEN PURP 600V 30A TO220AC Vishay General Semiconductor - Diodes Division |
464 |
|
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FRED Pt® | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 41 ns | 20 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-10ETS08FP-M3DIODE GP 800V 10A TO220-2FP Vishay General Semiconductor - Diodes Division |
879 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 800 V | 10A | 1.1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-20ETS12THM3DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
1,498 |
|
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- | TO-220-2 | Tube | Active | Standard | 1200 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 150°C |
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VS-E5TX2112S2L-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
1,495 |
|
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FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 20A | 3.6 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-AZH3106FP-M3DIODE GEN PURP 600V 30A TO3PF Vishay General Semiconductor - Diodes Division |
250 |
|
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FRED Pt® | SC-94 | Tube | Active | Standard | 600 V | 30A | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 19pF @ 600V, 1MHz | - | - | Through Hole | TO-3PF | -55°C ~ 175°C |
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VS-3C04ET07T-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
1,948 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 175pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-20ETS08-M3DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
7,992 |
|
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- | TO-220-2 | Tube | Active | Standard | 800 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
|
VS-E5TX3012-M3DIODE GEN PURP 1.2KV 30A TO220AC Vishay General Semiconductor - Diodes Division |
7,970 |
|
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FRED Pt® | TO-220-2 | Tube | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-EPH3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
180 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.65 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 26 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-E5PX3006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
636 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 41 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |