Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6643UDIODE GP 75V 300MA SQ-MELF B Microchip Technology |
4,010 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 200°C |
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JANTXV1N3595-1/TRDIODE GEN PURP 125V 150MA Microchip Technology |
2,371 |
|
- |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 125 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-PRF-19500/241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,743 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N3614DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
2,601 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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JAN1N5616US/TRDIODE GEN PURP 400V 1A D-5A Microchip Technology |
2,779 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
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1N5550USDIODE GEN PURP 200V 3A D-5B Microchip Technology |
4,091 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 200 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
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JANTX1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
4,115 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5804E3DIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
1 |
|
![]() Tabla de datos |
- | Axial | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5809E3DIODE GEN PURP 100V 6A B AXIAL Microchip Technology |
3,303 |
|
- |
- | B, Axial | Bulk | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N6642U/TRDIODE GEN PURP 75V 300MA D-5B Microchip Technology |
2,170 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |