Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTX1N6638US/TRDIODE GP 125V 300MA B SQ-MELF Microchip Technology |
3,558 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | - | - | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANTX1N6638U/TRDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
3,282 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
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1N5623E3HERMETICALLY SEALED GLASS RECTIF Microchip Technology |
3,739 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N5623/TRDIODE GEN PURP 1KV 1A Microchip Technology |
3,849 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | 15pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
4,049 |
|
![]() Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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1N4245USDIODE GEN PURP 200V 1A MELF-1 Microchip Technology |
3,211 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
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1N4247USDIODE GEN PURP 600V 1A MELF-1 Microchip Technology |
4,910 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
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1N4249USDIODE GEN PURP 1KV 1A MELF-1 Microchip Technology |
3,917 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
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1N4246USDIODE GEN PURP 400V 1A MELF-1 Microchip Technology |
2,852 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 400 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
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1N4248USDIODE GEN PURP 800V 1A MELF-1 Microchip Technology |
3,514 |
|
- |
- | SQ-MELF | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |