Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IDH08S60CAKSA1DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
![]() |
IDH12S60CAKSA1DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 530pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
![]() |
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
![]() |
MMBD914LT3HTMA1DIODE GEN PURP 100V 250MA SOT23 Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
![]() |
SDB06S60DIODE SIL CARB 600V 6A TO263 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
![]() |
SDP10S30DIODE SIL CARB 300V 10A TO220-3 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-3 | -55°C ~ 175°C |
![]() |
SDT10S60DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 350 µA @ 600 V | 350pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
![]() |
SIDC03D60F6X1SA2DIODE GP 600V 6A WAFER Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | Die | Bulk | Obsolete | Standard | 600 V | 6A | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
![]() |
SIDC04D60F6X1SA3DIODE GP 600V 9A WAFER Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | Die | Bulk | Obsolete | Standard | 600 V | 9A | 1.6 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
![]() |
SIDC06D60E6X1SA3DIODE GP 600V 10A WAFER Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | Die | Bulk | Obsolete | Standard | 600 V | 10A | 1.25 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |