Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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D6001N50TXPSA1DIODE GEN PURP 5KV 8010A Infineon Technologies |
4,277 |
|
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- | DO-200AE | Tray | Active | Standard | 5000 V | 8010A | 1.3 V @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 400 mA @ 5000 V | - | - | - | Chassis Mount | - | -40°C ~ 160°C |
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BAW78DE6327HTSA1DIODE GEN PURP 400V 1A SOT89 Infineon Technologies |
3,368 |
|
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- | TO-243AA | Tape & Reel (TR) | Obsolete | Standard | 400 V | 1A | 1.6 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1 µs | 1 µA @ 400 V | 10pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT89 | 150°C (Max) |
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SDT04S60DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies |
4,852 |
|
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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SDT10S30DIODE SIL CARB 300V 10A TO220-2 Infineon Technologies |
4,951 |
|
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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HFA15PB60PBFDIODE GP 600V 15A TO247AC Infineon Technologies |
3,711 |
|
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HEXFRED® | TO-247-2 | Tube | Obsolete | Standard | 600 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
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HFA15TB60PBFDIODE GEN PURP 600V 15A TO220AC Infineon Technologies |
4,561 |
|
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HEXFRED® | TO-220-2 | Tube | Obsolete | Standard | 600 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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BAS16WE6433HTMA1DIODE GEN PURP 80V 250MA SOT323 Infineon Technologies |
4,570 |
|
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- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT323 | 150°C (Max) |
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BAT 60B E6433DIODE SCHOTTKY 10V 3A SOD323-2 Infineon Technologies |
4,478 |
|
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- | SC-76, SOD-323 | Tape & Reel (TR) | Obsolete | Schottky | 10 V | 3A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25 µA @ 8 V | 30pF @ 5V, 1MHz | - | - | Surface Mount | PG-SOD323-3D | 150°C (Max) |
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IDH04S60CAKSA1DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies |
3,677 |
|
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CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDH05S60CAKSA1DIODE SIL CARB 600V 5A TO220-2-2 Infineon Technologies |
2,953 |
|
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CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |