Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GB2X50MPS17-227DIODE MOD SIC 1700V 136A SOT-227 GeneSiC Semiconductor |
79 |
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SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 1700 V | 136A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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MBRT20060RDIODE MOD SCHOTT 60V 100A 3TOWER GeneSiC Semiconductor |
67 |
|
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 60 V | 100A | 800 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MUR20020CTDIODE MODULE GP 200V 100A 2TOWER GeneSiC Semiconductor |
48 |
|
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- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MBR2X030A045DIODE MOD SCHOTT 45V 60A SOT-227 GeneSiC Semiconductor |
39 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 45 V | 60A | 700 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
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MUR2X060A02DIODE MODULE GP 200V 60A SOT-227 GeneSiC Semiconductor |
60 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 200 V | 60A | 1 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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MUR2X100A04DIODE MODULE GP 400V 100A SOT227 GeneSiC Semiconductor |
12 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 400 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 400 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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GE2X8MPS06DDIODE ARRAY SIC 650V 19A TO247-3 GeneSiC Semiconductor |
38 |
|
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SiC Schottky MPS™ | TO-247-3 | Tube | Discontinued at Digi-Key | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 19A (DC) | - | No Recovery Time > 500mA (Io) | - | - | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
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MBRT20060DIODE MOD SCHOTT 60V 100A 3TOWER GeneSiC Semiconductor |
10 |
|
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 60 V | 100A | 800 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MBR2X030A100DIODE MOD SCHOTT 100V 60A SOT227 GeneSiC Semiconductor |
0 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 100 V | 60A | 840 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 100 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
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MUR2X060A06DIODE MODULE GP 600V 60A SOT-227 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 600 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 600 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |