Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GD2X100MPS06NDIODE MOD SIC 650V 108A SOT-227 GeneSiC Semiconductor |
341 |
|
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SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 650 V | 108A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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MBRT400100DIODE MOD SCHOT 100V 200A 3TOWER GeneSiC Semiconductor |
34 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 100 V | 200A | 880 mV @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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GD2X30MPS06DDIODE ARRAY SIC 600V 30A TO247-3 GeneSiC Semiconductor |
150 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 600 V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0 ns | - | 175°C | - | - | Through Hole | TO-247-3 |
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GD2X20MPS12DDIODE ARR SIC 1200V 39A TO247-3 GeneSiC Semiconductor |
318 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 39A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
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MBR2X080A045DIODE MOD SCHOTT 45V 80A SOT-227 GeneSiC Semiconductor |
29 |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 45 V | 80A | 700 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
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FST16035DIODE MOD SCHOT 35V 160A TO249AB GeneSiC Semiconductor |
28 |
|
![]() Tabla de datos |
- | TO-249AB | Bulk | Active | 1 Pair Common Cathode | Schottky | 35 V | 160A | 750 mV @ 160 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | TO-249AB |
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MBR400100CTDIODE MOD SCHOT 100V 200A 2TOWER GeneSiC Semiconductor |
40 |
|
![]() Tabla de datos |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 100 V | 200A | 840 mV @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MBRT20040DIODE MOD SCHOTT 40V 100A 3TOWER GeneSiC Semiconductor |
33 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 40 V | 100A | 750 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT40040RDIODE MODULE GP 400V 200A 3TOWER GeneSiC Semiconductor |
39 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 400 V | 200A | 1.35 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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GB2X50MPS12-227DIODE MOD SIC 1200V 93A SOT-227 GeneSiC Semiconductor |
248 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 93A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |