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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UJ4SC075008L8SSICFET N-CH 750V 106A TOLL |
4,712 |
|
Tabla de datos |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 106A (Tc) | 12V | 11.4mOhm @ 70A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3340 pF @ 400 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
IXFN64N50PMOSFET N-CH 500V 61A SOT227B |
3,037 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 61A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IMBG65R007M2HXTMA1SICFET N-CH 650V 238A TO263-7 |
2,052 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 238A (Tc) | 15V, 20V | 8.5mOhm @ 146.3A, 18V | 5.6V @ 2.97mA | 179 nC @ 18 V | +23V, -7V | 6359 pF @ 400 V | - | 789W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
IXFN420N10TMOSFET N-CH 100V 420A SOT227B |
2,149 |
|
Tabla de datos |
HiPerFET™, Trench | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 420A (Tc) | 10V | 2.3mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 47000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
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NTH4L013N120M3SDISCRETE SIC M3S 1200V 13MOHM |
2,589 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 151A (Tc) | 18V | 20mOhm @ 75A, 18V | 4.4V @ 37mA | 254 nC @ 18 V | +22V, -10V | 5813 pF @ 800 V | - | 682W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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IXTX110N20L2MOSFET N-CH 200V 110A PLUS247-3 |
4,501 |
|
Tabla de datos |
Linear L2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXTK60N50L2MOSFET N-CH 500V 60A TO264 |
3,732 |
|
Tabla de datos |
Linear L2™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
|
IMZA65R007M2HXKSA1SILICON CARBIDE MOSFET |
3,160 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 210A (Tc) | 15V, 20V | 6.1mOhm @ 146.3A, 20V | 5.6V @ 29.7mA | 179 nC @ 18 V | +23V, -7V | 6359 pF @ 400 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
|
|
IXTK22N100LMOSFET N-CH 1000V 22A TO264 |
2,602 |
|
Tabla de datos |
Linear | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 20V | 600mOhm @ 11A, 20V | 5V @ 250µA | 270 nC @ 15 V | ±30V | 7050 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
|
IXFN60N80PMOSFET N-CH 800V 53A SOT-227B |
4,534 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN400N15X3MOSFET N-CH 150V 400A SOT227B |
3,859 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
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IXTN400N15X4MOSFET N-CH 150V 400A SOT227B |
3,696 |
|
Tabla de datos |
Ultra X4 | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 1mA | 430 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTN210P10TMOSFET P-CH 100V 210A SOT227B |
4,904 |
|
Tabla de datos |
TrenchP™ | SOT-227-4, miniBLOC | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
E4M0013120K13M, 1200V, SIC FET TO-247, AUTO |
2,429 |
|
Tabla de datos |
E | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 153A (Tc) | 15V | 17mOhm @ 84.29A, 15V | 3.8V @ 23.18mA | 293 nC @ 15 V | +19V, -8V | 7407 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
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EPC7020GCGAN FET HEMT 200V 80A COTS 5UB |
4,435 |
|
Tabla de datos |
eGaN® | 5-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 14.5mOhm @ 30A, 5V | 2.5V @ 7mA | - | +6V, -4V | 1313 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-SMD |
|
G2R50MT33K3300V 50M TO-247-4 SIC MOSFET |
3,888 |
|
Tabla de datos |
G2R™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | - | 536W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
EPC7020GSHGAN FET HEMT 200V 80A 5UB |
4,135 |
|
Tabla de datos |
eGaN® | 5-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 14.5mOhm @ 30A, 5V | 2.5V @ 7mA | 13.5 nC @ 100 V | +6V, -4V | 1313 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-SMD |
|
BSS84Q-7-FBSS FAMILY SOT23 T&R 3K |
30 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 0.59 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
PJA3401A_R1_00001SOT-23, MOSFET |
31 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 10V | 54mOhm @ 3.6A, 10V | 1.3V @ 250µA | 19 nC @ 10 V | ±12V | 994 pF @ 15 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
PMG85XP,115MOSFET P-CH 20V 2A 6TSSOP |
70 |
|
Tabla de datos |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Tj) | 2.5V, 4.5V | 115mOhm @ 2A, 4.5V | 1.15V @ 250µA | 7.2 nC @ 4.5 V | ±12V | 560 pF @ 10 V | - | 375mW (Ta), 2.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSSOP |
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