制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF654BIRF654B - 21A, 250V, 0.14OHM, N- |
447 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDPF12N50NZPOWER FIELD-EFFECT TRANSISTOR, 1 |
1,000 | - |
|
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UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF76132P375A, 30V, 0.016OHM, N-CHANNEL MO |
800 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM7432N-CTMOSFET N-CH 30V 27A DFN5x6 |
1,000 | - |
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- | DFN5x6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta) | 2.5V, 4.5V | 5.9mOhm @ 19.1A, 2.5V | 400mV @ 250µA (Min) | 43 nC @ 4.5 V | ±12V | 5146 pF @ 15 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5x6 |
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BUK769R6-80E,118NEXPERIA BUK769R6-80E - 75A, 80V |
341 | - |
|
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TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 9.6mOhm @ 20A, 10V | 4V @ 1mA | 59.8 nC @ 10 V | ±20V | 4682 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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MFT10N70P56MOSFET - PPAK5X6 100V 70A N-Chan |
100 | - |
|
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- | - | Strip | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AMS441PMOSFET P-CH -40V 50A DFN3X3 |
100 | - |
|
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- | 8-PowerWDFN | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta), 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 1V @ 250µA | 70 nC @ 4.5 V | ±20V | 4147 pF @ 15 V | - | 4.6W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFN (3.3x3.3) |
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AM70N25-50BMOSFET N-CH 250V 62A TO-263 |
40 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GPI65007DF56GaNFET N-CH 650V 7A DFN5x6 |
40 | - |
|
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- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 6V | - | 1.5V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 76.1 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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FCH110N65F-F155MOSFET N-CH 650V 35A TO247 |
69 | - |
|
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FRFET®, SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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CC-C2-B15-0322SiC Power MOSFET 1200V 12A |
30 | - |
|
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 135mOhm @ 10A, 15V | 3.2V @ 5mA | 40 nC @ 15 V | +15V, -5V | 1810 pF @ 200 V | - | 100W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FCH043N60POWER FIELD-EFFECT TRANSISTOR, 7 |
50 | - |
|
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SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NC1M120C75HTNGSiC MOSFET N 1200V 75mohm 47A 4 |
100 | - |
|
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NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C75RRNGSiC MOSFET N 1200V 75mohm 46A 7 |
100 | - |
|
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NC1M | TO-263-8, DPak (7 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 46A (Tc) | 18V | 75mOhm @ 20A, 18V | 2.3V @ 5mA | - | +18V, -5V | 1402 pF @ 1000 V | - | 240W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7L |
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IRFF130Power Field-Effect Transistor, 8 |
52 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NC1M120C40GTNGSiC MOSFET N 1200V 40mohm 76A 3 |
100 | - |
|
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NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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NC1M120C40HTNGSiC MOSFET N 1200V 40mohm 75A 4 |
100 | - |
|
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NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 366W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C35HTNGSIC MOSFET 1200V 35M 75A TO247- |
100 | - |
|
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NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 75A (Tc) | - | 50mOhm @ 33.3A, 18V | 4.5V @ 15mA | 190 nC @ 18 V | +18V, -5V | 2834 pF @ 1 kV | - | 386W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC2M120C20HTNGSIC MOSFET 1200V 20M 126A TO247 |
100 | - |
|
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NC2M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 126A (Tc) | - | 30mOhm @ 63A, 20V | 4.5V @ 20mA | 282 nC @ 20 V | +20V, -5V | 4615 pF @ 1 kV | - | 625W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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AMTP65H150G4LSGBGAN FET N-CH 650V 13A DFN8X8 |
35 | - |
|
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- | 4-PowerTSFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 10A, 10V | 1V @ 250µA | 8.8 nC @ 6 V | ±18V | 760 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |