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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AS2M040120PN-CHANNEL SILICON CARBIDE POWER |
50 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SCT20N120AGSICFET N-CH 1200V 20A HIP247 |
43 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 153W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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|
HCT7000MMOSFET N-CH 60V 200MA 3SMD |
2,057 |
|
Tabla de datos |
- | 3-SMD, No Lead | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-SMD |
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|
IXFX64N60Q3MOSFET N-CH 600V 64A PLUS247-3 |
17 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
APT40N60JCU2MOSFET N-CH 600V 40A SOT227 |
28 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
GPI65060DFCGaNFET N-CH 650V 60A DFN8x8 cu |
91 |
|
Tabla de datos |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A | 6V | 30mOhm @ 6A, 12V | 1.2V @ 3.5mA | 16 nC @ 6 V | +7.5V, -12V | 420 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
|
|
AS1M025120TN-CHANNEL SILICON CARBIDE POWER |
13 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 4200 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
APT77N60JC3MOSFET N-CH 600V 77A ISOTOP |
83 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IXFZ520N075T2MOSFET N-CH 75V 465A DE475 |
60 |
|
Tabla de datos |
HiPerFET™, TrenchT2™ | 6-SMD, Flat Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 465A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DE475 |
|
|
APT40M35JVRMOSFET N-CH 400V 93A SOT227 |
2 |
|
- |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 93A (Tc) | 10V | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065 nC @ 10 V | ±30V | 20160 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
APTML100U60R020T1AGMOSFET N-CH 1000V 20A SP1 |
12 |
|
Tabla de datos |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
|
VMO650-01FMOSFET N-CH 100V 690A Y3-DCB |
2 |
|
- |
HiPerFET™ | Y3-DCB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 690A (Tc) | 10V | 1.8mOhm @ 500mA, 10V | 6V @ 130mA | 2300 nC @ 10 V | ±20V | 59000 pF @ 25 V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-DCB |
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|
STDLED656MOSFET N-CH 650V 6A DPAK |
969 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 1.3Ohm @ 2.7A, 10V | 4.5V @ 50µA | 34 nC @ 10 V | ±30V | 895 pF @ 100 V | - | 70W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
AM2341P-CTMOSFET P-CH -40V 3A SOT-23 |
700 |
|
Tabla de datos |
- | SOT-23 | Strip | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 3A (Ta) | 4.5V, 10V | 140mOhm @ 2.1A, 4.5V | 1V @ 250µA | 5.8 nC @ 4.5 V | ±20V | 384 pF @ 15 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
|
G400P06TMOSFET P-CH 60V 32A TO-220 |
1,000 |
|
Tabla de datos |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 32A (Tc) | 10V | 40mOhm @ 12A, 10V | 3V @ 250µA | - | ±20V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
G18N20TMOSFET N-CH 200V 18A 110W 190m(m |
1,000 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 31 nC @ 5 V | ±30V | 1120 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GT700P08TMOSFET P-CH 80V 25A TO-220 |
1,000 |
|
Tabla de datos |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 25A (Tc) | 10V | 72mOhm @ 2A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
18N20JMOSFET N-CH 200V 18A TO-251 |
1,000 |
|
Tabla de datos |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 18A (Tc) | 10V | 160mOhm @ 9A, 10V | 3V @ 250µA | - | ±30V | - | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
|
|
GT130N10FMOSFET N-CH 100V 45A 41.7W 12m( |
1,000 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1215 pF @ 50 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
|
GT180N12MMOSFET N-CH 120V 55A 96W 17m(max |
800 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | 4.5V @ 250µA | 22 nC @ 10 V | ±20V | 1635 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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