| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS3006SDCPOWER FIELD-EFFECT TRANSISTOR, 3 |
3,000 |
|
Tabla de datos |
Dual Cool™, PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 3V @ 1mA | 80 nC @ 10 V | ±20V | 5725 pF @ 15 V | - | 3.3W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Dual Cool™56 |
|
FQI7N60TUPOWER FIELD-EFFECT TRANSISTOR, 7 |
1,000 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1430 pF @ 25 V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
|
2SK3483-AZ2SK3483-AZ - SWITCHING N-CHANNEL |
3,077 |
|
Tabla de datos |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Ta) | 4.5V, 10V | 52mOhm @ 14A, 10V | 2.5V @ 1mA | 49 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 1W (Ta), 40W (Tc) | 150°C | - | - | Through Hole | MP-3 |
|
IRF6716MTRPBFIRF6716 - 12V-300V N-CHANNEL POW |
44,319 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59 nC @ 4.5 V | ±20V | 5150 pF @ 13 V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF6716MTRPBFIRF6716 - 12V-300V N-CHANNEL POW |
26,497 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59 nC @ 4.5 V | ±20V | 5150 pF @ 13 V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
AUIRL3705ZSMOSFET N-CH 55V 75A D2PAK |
8,500 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
SPI11N60C3XKSA1SPI11N60C3 - 600V COOLMOS N-CHAN |
2,500 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
BUK6C3R3-75C,118NEXPERIA BUK6C3R3 - N-CHANNEL TR |
480 |
|
Tabla de datos |
TrenchMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 181A (Tc) | 10V | 3.4mOhm @ 90A, 10V | 2.8V @ 1mA | 253 nC @ 10 V | ±16V | 15800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
FQPF5N90POWER FIELD-EFFECT TRANSISTOR, 3 |
450 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Tc) | 10V | 2.3Ohm @ 1.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FCPF380N60POWER FIELD-EFFECT TRANSISTOR, 1 |
2,934 |
|
Tabla de datos |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40 nC @ 10 V | ±20V | 1665 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
NTD5C446NT4GNTD5C446 - SINGLE N-CHANNEL POWE |
188,187 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 34.3 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
AUIRF4104SMOSFET N-CH 40V 75A D2PAK |
7,751 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFSL7734PBFIRFSL7734 - 12V-300V N-CHANNEL P |
280 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
FDMC7570SPOWER FIELD-EFFECT TRANSISTOR, 2 |
4,336 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power33 |
|
AMR438NMOSFET N-CH 30V 112A DFN5X6 |
2,200 |
|
- |
- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Ta), 112A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 1V @ 250µA | 55 nC @ 4.5 V | ±20V | 5770 pF @ 15 V | - | 5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
AMIB144N12N3GMOSFET N-CH 120V 120A TO-263 |
1,400 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 120A (Tc) | 6.5V, 10V | 9.6mOhm @ 50A, 10V | 1V @ 250µA | 30 nC @ 6.5 V | ±20V | 2318 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
|
GT070N15MMOSFET N-CH 150V 140A 320W 5.8m( |
800 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 140A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 5850 pF @ 75 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
AUIRFZ48NMOSFET N-CH 55V 69A TO220AB |
18,190 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 69A (Tc) | 10V | 14mOhm @ 40A, 10V | 4V @ 100µA | 63 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF6726MTRPBFIRF6726 - 12V-300V N-CHANNEL POW |
3,930 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
AUIRL3705NAUIRL3705 - 55V-60V N-CHANNEL AU |
600 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | - | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | - | 3600 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |