制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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FDI9409-F085FDI9409 - N-CHANNEL POWERTRENCH |
1,600 | - |
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PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2980 pF @ 25 V | - | 94W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | I2PAK (TO-262) |
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PHB110NQ08T,118MOSFET N-CH 75V 75A D2PAK |
750 | - |
|
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TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | 4V @ 1mA | 113.1 nC @ 10 V | ±20V | 4860 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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FDPF041N06BL1MOSFET N-CH 60V 77A TO220F |
315 | - |
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PowerTrench® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 77A (Tc) | 10V | 4.1mOhm @ 77A, 10V | 4V @ 250µA | 69 nC @ 10 V | ±20V | 5690 pF @ 30 V | - | 44.1W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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UPA2706GR-E2-ATUPA2706GR-E2-AT - MOS FIELD EFFE |
14,759 | - |
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- | 8-SOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 15mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | ±20V | 660 pF @ 10 V | - | 3W (Ta), 15W (Tc) | 150°C | - | - | Surface Mount | 8-SOP |
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UPA2706GR-E1-ATUPA2706GR-E1-AT - MOS FIELD EFFE |
7,500 | - |
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- | 8-SOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 15mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | ±20V | 660 pF @ 10 V | - | 3W (Ta), 15W (Tc) | 150°C | - | - | Surface Mount | 8-SOP |
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FCP600N60ZPOWER FIELD-EFFECT TRANSISTOR, N |
781 | - |
|
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SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26 nC @ 10 V | ±20V | 1120 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDP070AN06A0MOSFET N-CH 60V 15A/80A TO220-3 |
746 | - |
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PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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2SK2632LS-CB112SK2632 - 2.5A, 800V, 4.8OHM, N- |
300 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM7364NMOSFET N-CH 60V 14A DFN3X3 |
2,200 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AMR416NMOSFET N-CH 100V 75A DFN5X6 |
300 | - |
|
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- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Ta) | 4.5V, 10V | 10mOhm @ 10A, 10V | 1V @ 250µA | 51 nC @ 4.5 V | ±20V | 7442 pF @ 15 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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NTMFS0D55N03CGT1G-01MOSFET N-CHANNEL 30V 35A (TA) 1. |
1,548,000 | - |
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 462A (Tc) | 10V | 0.58mOhm @ 30A, 10V | 2.2V @ 330µA | 224.9 nC @ 10 V | ±20V | 18500 pF @ 15 V | - | 1.1W (Ta), 199W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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AUIRLU3114Z-701TRLAUIRLU3114Z - 20V-40V N-CHANNEL |
39,000 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
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FCU850N80ZPOWER FIELD-EFFECT TRANSISTOR |
1,000 | - |
|
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SuperFET® II | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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NTMFS4C302NT1G-01MOSFET N-Channel 30V 41A (Ta), 2 |
34,500 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FQI8N60CTUPOWER FIELD-EFFECT TRANSISTOR, 7 |
6,000 | - |
|
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QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1255 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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FQI4N90TUPOWER FIELD-EFFECT TRANSISTOR, 4 |
1,502 | - |
|
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QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.2A (Tc) | 10V | 3.3Ohm @ 2.1A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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HUFA75433S3ST64A, 60V, 0.016OHM, N-CHANNEL MO |
520 | - |
|
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UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 64A (Tc) | 10V | 16mOhm @ 64A, 10V | 4V @ 250µA | 117 nC @ 20 V | ±20V | 1550 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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AUIRFZ24NSTRLMOSFET N-CH 55V 17A DPAK |
46,400 | - |
|
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF6726MTRPBFTRIRF6726 - 12V-300V N-CHANNEL POW |
4,800 | - |
|
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HEXFET® | DirectFET™ Isometric MT | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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AM4466NMOSFET N-CH 60V 15A SO-8 |
3,000 | - |
|
- |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 1V @ 250µA | 32 nC @ 4.5 V | ±20V | 4107 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |