制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFZ44ZLPBFIRFZ44 - 12V-300V N-CHANNEL POWE |
1,350 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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GC20N65MMOSFET N-CH 650V 20A 151W 180m( |
800 | - |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | 5V @ 250µA | 28 nC @ 10 V | ±30V | 1680 pF @ 400 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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FDD8444POWER FIELD-EFFECT TRANSISTOR, 1 |
310 | - |
|
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PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 145A (Tc) | 10V | 5.2mOhm @ 50A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±20V | 6195 pF @ 25 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQPF19N20MOSFET N-CH 200V 11.8A TO220F |
15,905 | - |
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QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11.8A (Tc) | 10V | 150mOhm @ 5.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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AUIRF1010ZMOSFET N-CH 55V 75A TO220AB |
12,268 | - |
|
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HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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FCPF1300N80ZYDMOSFET N-CH 800V 4A TO220F-3 |
750 | - |
|
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SuperFET® II | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21 nC @ 10 V | ±20V | 880 pF @ 100 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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RJK6011DP3-A0#J2RJK6011DP3-A0#J2 - SILICON NCH S |
45,000 | - |
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- | TO-261-4, TO-261AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 100mA | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 |
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AM7358NMOSFET N-CH 100V 28A DFN3X3 |
3,200 | - |
|
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- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 28A (Tc) | 4.5V, 10V | 18mOhm @ 6A, 10V | 1V @ 250µA | 11 nC @ 4.5 V | ±20V | 828 pF @ 50 V | - | 3.5W (Ta), 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3x3) |
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AM7440NMOSFET N-CH 40V 15A DFN5X6 |
2,500 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM7352NMOSFET N-CH 40V 44A DFN3X3 |
2,300 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM7356N-CTMOSFET N-CH 100V 20A DFN3x3 |
1,800 | - |
|
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- | DFN3x3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 50mOhm @ 3.5A, 4.5V | 1V @ 250µA | 6.2 nC @ 4.5 V | ±20V | 414 pF @ 50 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN3x3 |
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IRLU3636PBFIRLU3636 - 12V-300V N-CHANNEL PO |
439 | - |
|
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FCPF7N60YDTUMOSFET N-CH 600V 7A TO220F-3 |
2,683 | - |
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SuperFET™ | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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BUK6E4R0-75C,127NEXPERIA BUK6E4R0-75C - 120A, 75 |
19,000 | - |
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TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 2.8V @ 1mA | 234 nC @ 10 V | ±16V | 15450 pF @ 25 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | I2PAK |
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PHP20NQ20T,127NEXPERIA PHP20NQ20T - 20A, 200V, |
7,446 | - |
|
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TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 4V @ 1mA | 65 nC @ 10 V | ±20V | 2470 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BXL4004-1EBXL4004 - N-CHANNEL POWER MOSFET |
500 | - |
|
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- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | - | 140 nC @ 10 V | ±20V | 8200 pF @ 20 V | - | 75W (Tc) | 150°C | - | - | Through Hole | TO-220-3 |
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NTMFS5C442NLT1G-01N-Channel 40 V 27A (Ta), 130A (T |
129,356 | - |
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- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GT015N06TLMOSFET N-CH 60V 350A 350W 1m(ma |
6,000 | - |
|
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- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350A (Tc) | 4.5V, 10V | 1mOhm @ 80A, 10V | 2.5V @ 250µA | 152 nC @ 10 V | ±20V | 10694 pF @ 30 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L |
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FDB8870MOSFET N-CH 30V 23A/160A TO263AB |
2,877 | - |
|
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PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 132 nC @ 10 V | ±20V | 5200 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF6795MTRPBFIRF6795 - 12V-300V N-CHANNEL POW |
29,404 | - |
|
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HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53 nC @ 4.5 V | ±20V | 4280 pF @ 13 V | - | 2.8W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |