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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFT16N120PMOSFET N-CH 1200V 16A TO268 |
349 |
|
Tabla de datos |
HiPerFET™, Polar | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 500mA, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
HF9969-91AUTOMOTIVE POWER MOSFET |
2,400 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXFK110N07MOSFET N-CH 70V 110A TO264AA |
1,225 |
|
Tabla de datos |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70 V | 110A (Tc) | 10V | 6mOhm @ 55A, 10V | 4V @ 8mA | 480 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IGO60R070D1AUMA1GANFET N-CH 600V 31A 20DSO |
4,289 |
|
Tabla de datos |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-85 |
|
2SK1971-EN-CHANNEL POWER MOSFET |
1,331 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SK1947-EN-CHANNEL POWER MOSFET |
446 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SCTWA30N120IC POWER MOSFET 1200V HIP247 |
294 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA (Typ) | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
|
|
AS1M025120PN-CHANNEL SILICON CARBIDE POWER |
124 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 3600 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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|
IXFX27N80QMOSFET N-CH 800V 27A PLUS247-3 |
295 |
|
Tabla de datos |
HiPerFET™, Q Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
AMC2M0080120DSICFET N-CH 1200V 36A TO247 |
1,199 |
|
Tabla de datos |
WBG | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 36A (Tc) | 10V | 80mOhm @ 5A, 10V | 2V @ 250µA | 71 nC @ 50 V | ±25V | 1461 pF @ 6.5 V | - | 200W (Tc) | -55°C ~ 155°C (TJ) | - | - | Through Hole | TO-247 |
|
|
2SK1526-EN-CHANNEL POWER MOSFET |
528 |
|
Tabla de datos |
- | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 40A | 10V | 150mOhm @ 20A, 10V | 3V @ 1mA | - | ±30V | 5800 pF @ 10 V | - | - | 150°C | - | - | Through Hole | TO-3PL |
|
|
IXTX240N075L2MOSFET N-CH 75V 240A PLUS247-3 |
267 |
|
Tabla de datos |
Linear L2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 10V | 7mOhm @ 120A, 10V | 4.5V @ 3mA | 546 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
IXTK90N25L2MOSFET N-CH 250V 90A TO264 |
773 |
|
Tabla de datos |
Linear L2™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
SCT3040KRC14SICFET N-CH 1200V 55A TO247-4L |
806 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
SCT3030ARC14SICFET N-CH 650V 70A TO247-4L |
153 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
FS70UM-06#B0070A, 60V, N-CHANNEL MOSFET |
3,480 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MMIX1F160N30TMOSFET N-CH 300V 102A 24SMPD |
460 |
|
Tabla de datos |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 102A (Tc) | 10V | 20mOhm @ 60A, 10V | 5V @ 8mA | 335 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
|
2SK1519-EN-CHANNEL POWER MOSFET |
432 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT60M75L2LLGMOSFET N-CH 600V 73A 264 MAX |
210 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
|
|
FF06010FASICFET N-CH 650V 140A TOLL |
290 |
|
Tabla de datos |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 140A (Tc) | 18V | 18mOhm @ 60A, 18V | 2.5V @ 100mA | 315 nC @ 15 V | 18V | 7390 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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