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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
H5N3011P80-E#T2N-CHANNEL POWER MOSFET |
4,770 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SCT3080ARC14SICFET N-CH 650V 30A TO247-4L |
249 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
NVBLS0D7N06CMOSFET N-CH 60V 54A/470A 8HPSOF |
1,600 |
|
Tabla de datos |
- | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Ta), 470A (Tc) | 10V | 0.75mOhm @ 80A, 10V | 4V @ 661µA | 170 nC @ 10 V | ±20V | 13730 pF @ 30 V | - | 4.2W (Ta), 314W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-HPSOF |
|
IXFH50N20MOSFET N-CH 200V 50A TO247AD |
253 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 45mOhm @ 25A, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
SCTWA20N120IC POWER MOSFET 1200V HIP247 |
526 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | 3.5V @ 1mA (Typ) | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 175W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
|
C3M0075120J2-TRMOSFET N-CH 1200V 30A TO263 |
666 |
|
- |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | 48 nC @ 15 V | +19V, -8V | 1390 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IGO60R070D1AUMA2GAN HV |
785 |
|
Tabla de datos |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-85 |
|
|
S2M0040120J-1MOSFET SILICON CARBIDE SIC 1200V |
510 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
TSM60NB041PW C1GMOSFET N-CHANNEL 600V 78A TO247 |
2,484 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A (Tc) | 10V | 41mOhm @ 21.7A, 10V | 4V @ 250µA | 139 nC @ 10 V | ±30V | 6120 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
2SK1968-EN-CHANNEL POWER MOSFET |
181 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SCT3105KRC14SICFET N-CH 1200V 24A TO247-4L |
102 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
STW70N60DM6-4MOSFET N-CH 600V 62A TO247-4 |
150 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 62A (Tc) | 10V | 42mOhm @ 31A, 10V | 4.75V @ 250µA | 99 nC @ 10 V | ±25V | 4360 pF @ 100 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
SCT3060ARC14SICFET N-CH 650V 39A TO247-4L |
344 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
FCH041N60F-F085MOSFET N-CH 600V 76A TO247-3 |
444 |
|
Tabla de datos |
SuperFET® II | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 347 nC @ 10 V | ±20V | 10900 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
NTBGS001N06CPOWER MOSFET, 60 V, 1.1 M?, 342 |
546 |
|
Tabla de datos |
- | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 342A (Tc) | 10V, 12V | 1.1mOhm @ 112A, 12V | 4V @ 562µA | 139 nC @ 10 V | ±20V | 11110 pF @ 30 V | - | 3.7W (Ta), 245W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STL42N65M5MOSFET N-CH 650V 4A PWRFLAT HV |
2,915 |
|
Tabla de datos |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Ta), 34A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4650 pF @ 100 V | - | 3W (Ta), 208W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
|
STFW60N65M5MOSFET N-CH 650V 46A ISOWATT |
282 |
|
Tabla de datos |
MDmesh™ V | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 59mOhm @ 23A, 10V | 5V @ 250µA | 139 nC @ 10 V | ±25V | 6810 pF @ 100 V | - | 79W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
|
FCH76N60NPOWER FIELD-EFFECT TRANSISTOR, 7 |
170 |
|
Tabla de datos |
SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
R6046ANZ1C9MOSFET N-CH 600V 46A TO247 |
444 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 90mOhm @ 23A, 10V | 4.5V @ 1mA | 150 nC @ 10 V | ±30V | 6000 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
RJK60S5DPN-00#T2N-CHANNEL POWER MOSFET |
138,686 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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