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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
H5N2305P-EPOWER FIELD-EFFECT TRANSISTOR |
310 |
|
Tabla de datos |
- | TO-3PFM, SC-93-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 230 V | 35A (Ta) | 10V | 700mOhm @ 6A, 10V | 4V @ 1mA | 105 nC @ 10 V | ±30V | - | - | 60W (Tc) | 150°C | - | - | Through Hole | TO-3PFM |
|
STI30N65M5MOSFET N-CH 650V 22A I2PAK |
993 |
|
Tabla de datos |
MDmesh™ V | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64 nC @ 10 V | ±25V | 2880 pF @ 100 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
|
MCTL300N10Y-TPMOSFET N-CH 100V 300A TOLL-8L |
21,124 |
|
Tabla de datos |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 300A (Tc) | - | 1.45mOhm @ 30A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 13258 pF @ 50 V | - | 500W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L |
|
FCP36N60NMOSFET N-CH 600V 36A TO220-3 |
2,094 |
|
Tabla de datos |
SupreMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IXFH270N06T3MOSFET N-CH 60V 270A TO247 |
495 |
|
Tabla de datos |
HiperFET™, TrenchT3™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
4AK18N-CHANNEL POWER MOSFET |
6,497 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SD211DE TO-72 4L ROHSHIGH SPEED N-CHANNEL LATERAL DMO |
303 |
|
Tabla de datos |
SD211 | TO-206AF, TO-72-4 Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50mA (Ta) | 5V, 25V | 45Ohm @ 1mA, 10V | 1.5V @ 1µA | - | +25V, -300mV | - | - | 300mW (Ta) | -55°C ~ 125°C (TJ) | - | - | Through Hole | TO-72-4 |
|
IRFAC50N-CHANNEL HERMETIC MOS HEXFET |
129 |
|
Tabla de datos |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A | - | - | - | - | - | - | - | 150W | - | - | - | Through Hole | TO-204AA (TO-3) |
|
STW19NM50NMOSFET N-CH 500V 14A TO247-3 |
313 |
|
Tabla de datos |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 250mOhm @ 7A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 1000 pF @ 50 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IPT014N10N5ATMA1TRENCH >=100V |
901 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | - | MOSFET (Metal Oxide) | 100 V | 362A | 10V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 |
|
BTS131E3045ANTMA1N-CHANNEL POWER MOSFET |
8,919 |
|
Tabla de datos |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 25A (Tc) | 4.5V | 60mOhm @ 12A, 4.5V | 2.5V @ 1mA | - | ±10V | 1400 pF @ 25 V | - | 75W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
STW28NM60NDMOSFET N-CH 600V 23A TO247 |
127 |
|
Tabla de datos |
FDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2090 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
STW15NM60NDMOSFET N-CH 600V 14A TO247-3 |
372 |
|
Tabla de datos |
FDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 299mOhm @ 7A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±25V | 1250 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
RJK1525DPP-MG#T2N-CHANNEL POWER MOSFET |
1,582 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GPI65015DFNGANFET N-CH 650V 15A DFN 8X8 |
160 |
|
Tabla de datos |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A | 6V | - | 1.2V @ 3.5mA | 3.3 nC @ 6 V | +7.5V, -12V | 116 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
FDMT1D3N08BMOSFET N-CH 80V 164A 8DL COOL88 |
2,727 |
|
Tabla de datos |
PowerTrench® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 164A (Tc) | 8V, 10V | 1.35mOhm @ 36A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 19600 pF @ 40 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-Dual Cool™88 |
|
|
RJK1536DPE-00#J3N-CHANNEL POWER MOSFET |
86,960 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RFG75N05EN-CHANNEL POWER MOSFET |
18,160 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
IRFP350LCPBFMOSFET N-CH 400V 16A TO247-3 |
4,236 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
CGD65A130S2-T13650V GAN HEMT, 130MOHM, DFN8X8. |
3,306 |
|
- |
ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 12V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
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