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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDB029N06MOSFET N-CH 60V 120A D2PAK |
3,152 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.1mOhm @ 75A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±20V | 9815 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STP34N65M5MOSFET N-CH 650V 28A TO220 |
241 |
|
Tabla de datos |
MDmesh™ V | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2700 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRFP31N50LPBFMOSFET N-CH 500V 31A TO247-3 |
1,148 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 5000 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
STF21NM60NDMOSFET N-CH 600V 17A TO220FP |
689 |
|
Tabla de datos |
FDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±25V | 1800 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
|
MTW24N40EN-CHANNEL POWER MOSFET |
2,556 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 24A (Tc) | 10V | 160mOhm @ 12A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
STW24NM60NMOSFET N-CH 600V 17A TO247 |
1,144 |
|
Tabla de datos |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±30V | 1400 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IPP018N10N5AKSA1TRENCH >=100V |
460 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta), 205A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
FCA20N60MOSFET N-CH 600V 20A TO3PN |
445 |
|
Tabla de datos |
SuperFET™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
|
SIHW30N60E-GE3MOSFET N-CH 600V 29A TO247AD |
145 |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
IPZ65R095C7XKSA1MOSFET N-CH 650V 24A TO247-4 |
220 |
|
Tabla de datos |
CoolMOS™ C7 | TO-247-4 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
IRFAF50N-CHANNEL HERMETIC MOS HEXFET |
644 |
|
Tabla de datos |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.2A (Tc) | 10V | 1.85Ohm @ 6.2A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
|
IRFAF52N-CHANNEL HERMETIC MOS HEXFET |
172 |
|
Tabla de datos |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.7A | - | - | - | - | - | - | - | 150W | - | - | - | Through Hole | TO-204AA (TO-3) |
|
|
RJK5020DPK01-EN-CHANNEL POWER MOSFET |
451 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STB36NM60NDMOSFET N-CH 600V 29A D2PAK |
472 |
|
Tabla de datos |
FDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4 nC @ 10 V | ±25V | 2785 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
STB180N55F3MOSFET N-CH 55V 120A D2PAK |
2,169 |
|
Tabla de datos |
STripFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 3.5mOhm @ 60A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
STB21NM60NDMOSFET N-CH 600V 17A D2PAK |
425 |
|
Tabla de datos |
FDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±25V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
RJL60S5DPP-E0#T2N-CHANNEL POWER MOSFET |
45,900 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MSC360SMA120SMOSFET SIC 1200 V 360 MOHM TO-26 |
205 |
|
Tabla de datos |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CGD65B130S2-T13650V GAN HEMT, 130MOHM, DFN5X6. |
4,875 |
|
Tabla de datos |
ICeGaN™ | 8-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 9V, 20V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
G3R160MT12JSIC MOSFET N-CH 19A TO263-7 |
415 |
|
Tabla de datos |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V | 208mOhm @ 10A, 15V | 2.7V @ 5mA (Typ) | 23 nC @ 15 V | +20V, -10V | 724 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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