制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IXTF1N400MOSFET N-CH 4000V 1A I4PAC IXYS |
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- | i4-Pac™-5 (3 Leads) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4000 V | 1A (Tc) | 10V | 60Ohm @ 500mA, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXFR58N20MOSFET N-CH 200V 50A ISOPLUS247 IXYS |
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HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 140 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXTA15P15TMOSFET P-CH 150V 15A TO263 IXYS |
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TrenchP™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 15A (Tc) | 10V | 240mOhm @ 7A, 10V | 4.5V @ 250µA | 48 nC @ 10 V | ±15V | 3650 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXTF03N400MOSFET N-CH 4000V 300MA I4PAC IXYS |
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- | i4-Pac™-5 (3 Leads) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4000 V | 300mA (Tc) | 10V | 300Ohm @ 150mA, 10V | 4V @ 250µA | 16.3 nC @ 10 V | ±20V | 435 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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FDM15-06KC5MOSFET N-CH 600V 15A I4PAC IXYS |
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CoolMOS™ | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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FDM47-06KC5MOSFET N-CH 600V 47A I4PAC IXYS |
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CoolMOS™, HiPerDyn™ | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXFH80N30P3MOSFET N-CH 300V 80A TO-247 IXYS |
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HiPerFET™, Polar3™ | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFN40N110Q3MOSFET N-CH 1100V 35A SOT-227B IXYS |
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HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 35A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 8mA | 300 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN64N50PD3MOSFET N-CH 500V 50A SOT227B IXYS |
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PolarHV™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 85mOhm @ 32A, 10V | 5V @ 8mA | 186 nC @ 10 V | ±30V | 11000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFQ24N50P2MOSFET N-CH 500V 24A TO3P IXYS |
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HiPerFET™, PolarP2™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 270mOhm @ 500mA, 10V | 4.5V @ 1mA | 48 nC @ 10 V | ±30V | 2890 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |