制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VMO1600-02PMOSFET N-CH 200V 1900A Y3-LI IXYS |
0 | - |
|
![]() Tabla de datos |
PolarHT™ | Y3-Li | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1900A (Tc) | 10V | 1.7mOhm @ 1600A, 10V | 5V @ 5mA | 2900 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-Li |
![]() |
IXFN90N170SKSICFET N-CH 1700V 90A SOT227B IXYS |
0 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 90A (Tc) | 20V | 35mOhm @ 100A, 20V | 4V @ 36mA | 376 nC @ 20 V | +20V, -5V | 7340 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
![]() |
VMO550-01FMOSFET N-CH 100V 590A Y3-DCB IXYS |
0 | - |
|
- |
HiPerFET™ | Y3-DCB | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 590A (Tc) | 10V | 2.1mOhm @ 500mA, 10V | 6V @ 110mA | 2000 nC @ 10 V | ±20V | 50000 pF @ 25 V | - | 2200W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-DCB |
![]() |
IXFH42N20MOSFET N-CH 200V 42A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 42A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH58N20MOSFET N-CH 200V 58A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH40N30MOSFET N-CH 300V 40A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 4mA | 200 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH24N50MOSFET N-CH 500V 24A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH20N60MOSFET N-CH 600V 20A TO-247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 350mOhm @ 10A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH11N80MOSFET N-CH 800V 11A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 950mOhm @ 500mA, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
![]() |
IXFH12N100MOSFET N-CH 1000V 12A TO247AD IXYS |
0 | - |
|
![]() Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |