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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDB6670ASMOSFET N-CH 30V 62A TO263AB Fairchild Semiconductor |
5,998 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Ta) | 4.5V, 10V | 8.5mOhm @ 31A, 10V | 3V @ 1mA | 39 nC @ 15 V | ±20V | 1570 pF @ 15 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQP11N50CFMOSFET N-CH 500V 11A TO220-3 Fairchild Semiconductor |
2,116 |
|
Tabla de datos |
FRFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDB3672MOSFET N-CH 100V 7.2A/44A TO263 Fairchild Semiconductor |
400 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Ta), 44A (Tc) | 6V, 10V | 28mOhm @ 44A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
HUF75345P3_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
252 |
|
Tabla de datos |
UltraFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275 nC @ 20 V | ±20V | 4000 pF @ 25 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDC655ANMOSFET N-CH 30V 6.3A SUPERSOT6 Fairchild Semiconductor |
299,497 |
|
Tabla de datos |
PowerTrench® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 27mOhm @ 6.3A, 10V | 3V @ 250µA | 13 nC @ 5 V | ±20V | 830 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
|
FDS2070N3MOSFET N-CH 150V 4.1A 8SO Fairchild Semiconductor |
8,740 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.1A (Ta) | 6V, 10V | 78mOhm @ 4.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1884 pF @ 75 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
ISL9N302AS3MOSFET N-CH 30V 75A TO-262AA Fairchild Semiconductor |
400 |
|
- |
UltraFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 2.3mOhm @ 75A, 10V | 3V @ 250µA | 300 nC @ 10 V | ±20V | 11000 pF @ 15 V | - | 345W (Tc) | - | - | - | Through Hole | I2PAK (TO-262) |
|
IRF644B-FP001IRF644B - DISCRETE MOSFET Fairchild Semiconductor |
636 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDS6299SMOSFET N-CH 30V 21A 8SOIC Fairchild Semiconductor |
25,342 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.9mOhm @ 21A, 10V | 3V @ 1mA | 81 nC @ 10 V | ±20V | 3880 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
FDS6162N7MOSFET N-CH 20V 23A 8SO Fairchild Semiconductor |
15,029 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 23A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 23A, 4.5V | 1.5V @ 250µA | 73 nC @ 4.5 V | ±12V | 5521 pF @ 10 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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