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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFP9520P-CHANNEL POWER MOSFET Fairchild Semiconductor |
19,524 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SFR9120TFP-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,154 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.9A (Tc) | 10V | 600mOhm @ 2.5A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
SFR2955TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,002 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 7.6A (Tc) | 10V | 300mOhm @ 3.8A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDG316PSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,479 |
|
Tabla de datos |
PowerTrench® | 6-TSSOP, SC-88, SOT-363 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.6A (Ta) | 4.5V, 10V | 190mOhm @ 1.6A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 165 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-88 (SC-70-6) |
|
|
SFR9014TFMOSFET P-CH 60V 5.3A DPAK Fairchild Semiconductor |
2,000 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.3A (Tc) | 10V | 500mOhm @ 2.7A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 2.5W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
IRLS620AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,494 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.1A (Tc) | 5V | 800mOhm @ 2.05A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±20V | 430 pF @ 25 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
HUFA75307P3MOSFET N-CH 55V 15A TO220-3 Fairchild Semiconductor |
10,804 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
HUF76407D3SMOSFET N-CH 60V 12A TO252AA Fairchild Semiconductor |
9,800 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
HUFA75307D3SMOSFET N-CH 55V 15A TO252AA Fairchild Semiconductor |
7,254 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDS8878POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
449,382 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.2A (Ta) | 4.5V, 10V | 14mOhm @ 10.2A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 897 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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