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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQD5N50TFMOSFET N-CH 500V 3.5A DPAK Fairchild Semiconductor |
28,688 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 1.8Ohm @ 1.75A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±30V | 610 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQU3N60TUMOSFET N-CH 600V 2.4A IPAK Fairchild Semiconductor |
21,754 |
|
Tabla de datos |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 450 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
HUF76113T3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
19,318 |
|
Tabla de datos |
- | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 31mOhm @ 4.7A, 10V | 3V @ 250µA | 20.5 nC @ 10 V | ±20V | 625 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223-4 |
|
FQD5N50CTMMOSFET N-CH 500V 4A DPAK Fairchild Semiconductor |
8,578 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQD2N60TFMOSFET N-CH 600V 2A DPAK Fairchild Semiconductor |
7,387 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQU6N25TUMOSFET N-CH 250V 4.4A IPAK Fairchild Semiconductor |
6,803 |
|
Tabla de datos |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1Ohm @ 2.2A, 10V | 5V @ 250µA | 8.5 nC @ 10 V | ±30V | 300 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
FDMS8570S28A, 25V, 0.0028OHM, N-CHANNEL, Fairchild Semiconductor |
6,262 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.2V @ 1mA | 425 nC @ 10 V | ±12V | 2825 pF @ 13 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDS7098N3MOSFET N-CH 30V 14A 8SO Fairchild Semiconductor |
5,328 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 3V @ 250µA | 22 nC @ 5 V | ±20V | 1587 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
FDC699PMOSFET P-CH 20V 7A SUPERSOT6 Fairchild Semiconductor |
4,762 |
|
Tabla de datos |
PowerTrench® | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.5V @ 250µA | 38 nC @ 5 V | ±12V | 2640 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 FLMP |
|
|
FQI2N90TUMOSFET N-CH 900V 2.2A I2PAK Fairchild Semiconductor |
2,930 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.2A (Tc) | 10V | 7.2Ohm @ 1.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 3.13W (Ta), 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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