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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NDS8426AMOSFET N-CH 20V 10.5A 8SOIC Fairchild Semiconductor |
296,640 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 10.5A (Ta) | 2.7V, 4.5V | 13.5mOhm @ 10.5A, 4.5V | 1V @ 250µA | 60 nC @ 4.5 V | ±8V | 2150 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQD5N40TMMOSFET N-CH 400V 3.4A DPAK Fairchild Semiconductor |
155,118 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDD6778AMOSFET N-CH 25V 12A/10A DPAK Fairchild Semiconductor |
128,596 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 12A (Ta) | 4.5V, 10V | 14mOhm @ 10A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 870 pF @ 13 V | - | 3.7W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDFC3N108MOSFET N-CH 20V 3A SUPERSOT6 Fairchild Semiconductor |
98,521 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 70mOhm @ 3A, 4.5V | 1.5V @ 250µA | 4.9 nC @ 4.5 V | ±12V | 355 pF @ 10 V | Schottky Diode (Isolated) | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
|
FDG361NMOSFET N-CH 100V 600MA SC88 Fairchild Semiconductor |
98,270 |
|
Tabla de datos |
PowerTrench® | 6-TSSOP, SC-88, SOT-363 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 600mA (Ta) | 6V, 10V | 500mOhm @ 600mA, 10V | 4V @ 250µA | 5 nC @ 10 V | ±20V | 153 pF @ 50 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-88 (SC-70-6) |
|
|
FDD7030BLMOSFET N-CH 30V 14A/56A DPAK Fairchild Semiconductor |
80,423 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1425 pF @ 15 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
HUF76121D3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
59,388 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
IRFS630AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
55,970 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 400mOhm @ 3.25A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
FQU20N06TUMOSFET N-CH 60V 16.8A IPAK Fairchild Semiconductor |
17,796 |
|
Tabla de datos |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16.8A (Tc) | 10V | 63mOhm @ 8.4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
HUF75309P3MOSFET N-CH 55V 19A TO220-3 Fairchild Semiconductor |
8,290 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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