Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STWA60N043DM9N-CHANNEL 600 V, 38 MOHM TYP., 5 STMicroelectronics |
144 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 56A (Tc) | 10V | 43mOhm @ 28A, 10V | 4.5V @ 250µA | 78.6 nC @ 10 V | ±30V | 4675 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
|
STW69N65M5MOSFET N-CH 650V 58A TO247 STMicroelectronics |
477 |
|
Tabla de datos |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 330W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
STL57N65M5MOSFET N-CH 650V 4.3A 8POWERFLAT STMicroelectronics |
5,445 |
|
Tabla de datos |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.3A (Ta), 22.5A (Tc) | 10V | 69mOhm @ 20A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 2.8W (Ta), 189W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
|
|
SCTWA35N65G2V-4DISCRETE STMicroelectronics |
600 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +18V, -5V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
STH12N120K5-2AGAUTOMOTIVE-GRADE N-CHANNEL 1200 STMicroelectronics |
998 |
|
Tabla de datos |
MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
|
SCT055HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
523 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 72mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | +22V, -10V | 721 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | HU3PAK |
|
STY60NK30ZMOSFET N-CH 300V 60A MAX247 STMicroelectronics |
490 |
|
Tabla de datos |
SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 100µA | 220 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
|
|
SCT060HU75G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
582 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 30A (Tc) | 15V, 18V | 78mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | 4.2V @ 1mA | 680 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | HU3PAK |
|
SCTH35N65G2V-7AGSICFET N-CH 650V 45A H2PAK-7 STMicroelectronics |
1,000 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
|
|
SCTW60N120G2DISCRETE STMicroelectronics |
600 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 18V | 5V @ 1mA | 94 nC @ 8 V | +18V, -5V | 1969 pF @ 800 V | - | 389W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
