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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STL7N60M2MOSFET N-CH 600V 5A POWERFLAT STMicroelectronics |
2,900 |
|
Tabla de datos |
MDmesh™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.05Ohm @ 2A, 10V | 4V @ 250µA | 8.8 nC @ 10 V | ±25V | 271 pF @ 100 V | - | 4W (Ta), 67W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFLAT™ (5x5) |
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STD12N60M2MOSFET N-CHANNEL 600V 9A DPAK STMicroelectronics |
7,451 |
|
Tabla de datos |
MDmesh™ M2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | - | 85W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
STD1HN60K3MOSFET N-CH 600V 1.2A DPAK STMicroelectronics |
1,500 |
|
Tabla de datos |
SuperMESH3™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.2A (Tc) | 10V | 8Ohm @ 600mA, 10V | 4.5V @ 50µA | 9.5 nC @ 10 V | ±30V | 140 pF @ 50 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
STP2N95K5MOSFET N-CH 950V 2A TO220 STMicroelectronics |
970 |
|
Tabla de datos |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10 nC @ 10 V | 30V | 105 pF @ 100 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
STL10N65M2MOSFET N-CH 650V 4.5A POWERFLAT STMicroelectronics |
2,983 |
|
Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 10.3 nC @ 10 V | ±25V | 315 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) HV |
|
STD5NK40Z-1MOSFET N-CH 400V 3A IPAK STMicroelectronics |
2,916 |
|
Tabla de datos |
SuperMESH™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3A (Tc) | 10V | 1.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 17 nC @ 10 V | ±30V | 305 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
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STU8N80K5MOSFET N-CH 800V 6A TO251 STMicroelectronics |
1,957 |
|
Tabla de datos |
SuperMESH5™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
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STD4LN80K5MOSFET N-CHANNEL 800V 3A DPAK STMicroelectronics |
2,420 |
|
Tabla de datos |
MDmesh™ K5 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7 nC @ 10 V | ±30V | 122 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
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STD4NK60ZT4MOSFET N-CH 600V 4A DPAK STMicroelectronics |
2,204 |
|
Tabla de datos |
SuperMESH™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 70W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
STP4LN80K5MOSFET N-CHANNEL 800V 3A TO220 STMicroelectronics |
978 |
|
Tabla de datos |
MDmesh™ K5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7 nC @ 10 V | ±30V | 122 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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