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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCTW40N120G2VSILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
555 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
|
STH12N120K5-2MOSFET N-CH 1200V 12A H2PAK-2 STMicroelectronics |
2,999 |
|
Tabla de datos |
MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
STW45NM50MOSFET N-CH 500V 45A TO247-3 STMicroelectronics |
491 |
|
Tabla de datos |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 100mOhm @ 22.5A, 10V | 5V @ 250µA | 117 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 417W (Tc) | -65°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
STW88N65M5-4MOSFET N-CH 650V 84A TO247-4L STMicroelectronics |
183 |
|
Tabla de datos |
MDmesh™ M5 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
SCTH35N65G2V-7SICFET N-CH 650V 45A H2PAK-7 STMicroelectronics |
1,694 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
|
|
SCT30N120SICFET N-CH 1200V 40A HIP247 STMicroelectronics |
439 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
|
STU3LN80K5MOSFET N-CHANNEL 800V 2A IPAK STMicroelectronics |
2,997 |
|
Tabla de datos |
MDmesh™ K5 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.25Ohm @ 1A, 10V | 5V @ 100µA | 2.63 nC @ 10 V | ±30V | 102 pF @ 100 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251) |
|
|
STD3NK60Z-1MOSFET N-CH 600V 2.4A IPAK STMicroelectronics |
2,896 |
|
Tabla de datos |
SuperMESH™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8 nC @ 10 V | ±30V | 311 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
|
STD2NC45-1MOSFET N-CH 450V 1.5A IPAK STMicroelectronics |
907 |
|
Tabla de datos |
SuperMESH™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 1.5A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 7 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 30W (Tc) | -65°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
|
STU2N62K3MOSFET N-CH 620V 2.2A IPAK STMicroelectronics |
4,714 |
|
Tabla de datos |
SuperMESH3™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 620 V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15 nC @ 10 V | ±30V | 340 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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